ملخص
Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.
اللغة الأصلية | English |
---|---|
الصفحات (من إلى) | 765-768 |
عدد الصفحات | 4 |
دورية | Surface Review and Letters |
مستوى الصوت | 14 |
رقم الإصدار | 4 |
المعرِّفات الرقمية للأشياء | |
حالة النشر | Published - أغسطس 2007 |
ASJC Scopus subject areas
- ???subjectarea.asjc.3100.3104???
- ???subjectarea.asjc.3100.3110???
- ???subjectarea.asjc.2500.2508???
- ???subjectarea.asjc.2500.2505???