Density of surface states in Pd/SiGe/Si interface from capacitance measurements

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Original languageEnglish
Pages (from-to)765-768
Number of pages4
JournalSurface Review and Letters
Volume14
Issue number4
DOIs
Publication statusPublished - Aug 2007

Keywords

  • Capacitance spectroscopy
  • Interface states
  • Schottky barrier

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Fingerprint Dive into the research topics of 'Density of surface states in Pd/SiGe/Si interface from capacitance measurements'. Together they form a unique fingerprint.

  • Cite this