Density of surface states in Pd/SiGe/Si interface from capacitance measurements

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Original languageEnglish
Pages (from-to)765-768
Number of pages4
JournalSurface Review and Letters
Volume14
Issue number4
DOIs
Publication statusPublished - Aug 2007

Fingerprint

Schottky barrier diodes
Capacitance measurement
Interface states
Surface states
Schottky diodes
energy distribution
Capacitance
capacitance
Irradiation
irradiation
profiles
Temperature
temperature

Keywords

  • Capacitance spectroscopy
  • Interface states
  • Schottky barrier

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Atomic and Molecular Physics, and Optics
  • Surfaces and Interfaces

Cite this

Density of surface states in Pd/SiGe/Si interface from capacitance measurements. / Sellai, A.; Mamor, M.; Al-Harthi, S.

In: Surface Review and Letters, Vol. 14, No. 4, 08.2007, p. 765-768.

Research output: Contribution to journalArticle

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