Density of surface states in Pd/SiGe/Si interface from capacitance measurements

A. Sellai; M. Mamor; S. Al-Harthi

doi:10.1142/S0218625X07010226

Density of surface states in Pd/SiGe/Si interface from capacitance measurements

A. Sellai^*, M. Mamor, S. Al-Harthi

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Pd/Si_0.9Ge_0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

Original language	English
Pages (from-to)	765-768
Number of pages	4
Journal	Surface Review and Letters
Volume	14
Issue number	4
DOIs	https://doi.org/10.1142/S0218625X07010226
Publication status	Published - Aug 2007

Keywords

Capacitance spectroscopy
Interface states
Schottky barrier

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1142/S0218625X07010226

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@article{4c94764d75e04e1d89d6ad972d551786,

title = "Density of surface states in Pd/SiGe/Si interface from capacitance measurements",

abstract = "Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.",

keywords = "Capacitance spectroscopy, Interface states, Schottky barrier",

author = "A. Sellai and M. Mamor and S. Al-Harthi",

note = "Funding Information: We thank Sultan Qaboos University for financial support under project SCI/PHYS/05/01.",

year = "2007",

month = aug,

doi = "10.1142/S0218625X07010226",

language = "English",

volume = "14",

pages = "765--768",

journal = "Surface Review and Letters",

issn = "0218-625X",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "4",

}

TY - JOUR

T1 - Density of surface states in Pd/SiGe/Si interface from capacitance measurements

AU - Sellai, A.

AU - Mamor, M.

AU - Al-Harthi, S.

N1 - Funding Information: We thank Sultan Qaboos University for financial support under project SCI/PHYS/05/01.

PY - 2007/8

Y1 - 2007/8

N2 - Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

AB - Pd/Si0.9Ge0.1/Si Schottky barrier diodes subjected to irradiation are characterized using capacitance and conductance measurements performed under forward and reverse bias while varying the temperature and frequency. The C-V technique has been used in particular to determine the carriers profile as well as the interface state density and its energy distribution.

KW - Capacitance spectroscopy

KW - Interface states

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=34548458519&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548458519&partnerID=8YFLogxK

U2 - 10.1142/S0218625X07010226

DO - 10.1142/S0218625X07010226

M3 - Article

AN - SCOPUS:34548458519

SN - 0218-625X

VL - 14

SP - 765

EP - 768

JO - Surface Review and Letters

JF - Surface Review and Letters

IS - 4

ER -

Density of surface states in Pd/SiGe/Si interface from capacitance measurements

Abstract

Keywords

ASJC Scopus subject areas

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