Abstract
Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb. Effect of temperature on graphene mobility under varying strain is studied. Non symmetric temperature dependence was observed for the two crystallographic orientations.
| Original language | English |
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| Title of host publication | Proceedings of the World Congress on Engineering 2011, WCE 2011 |
| Pages | 1357-1362 |
| Number of pages | 6 |
| Volume | 2 |
| Publication status | Published - 2011 |
| Event | World Congress on Engineering 2011, WCE 2011 - London, United Kingdom Duration: Jul 6 2011 → Jul 8 2011 |
Other
| Other | World Congress on Engineering 2011, WCE 2011 |
|---|---|
| Country | United Kingdom |
| City | London |
| Period | 7/6/11 → 7/8/11 |
Keywords
- Graphene
- Mobility
- Scattering
- Strain
ASJC Scopus subject areas
- Computer Science(all)
- Engineering(all)
- Applied Mathematics