Temperature dependent mobility in strained graphene

Raheel Shah*, Tariq M G Mohiuddin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb. Effect of temperature on graphene mobility under varying strain is studied. Non symmetric temperature dependence was observed for the two crystallographic orientations.

Original languageEnglish
Title of host publicationProceedings of the World Congress on Engineering 2011, WCE 2011
Pages1357-1362
Number of pages6
Volume2
Publication statusPublished - 2011
EventWorld Congress on Engineering 2011, WCE 2011 - London, United Kingdom
Duration: Jul 6 2011Jul 8 2011

Other

OtherWorld Congress on Engineering 2011, WCE 2011
CountryUnited Kingdom
CityLondon
Period7/6/117/8/11

Keywords

  • Graphene
  • Mobility
  • Scattering
  • Strain

ASJC Scopus subject areas

  • Computer Science(all)
  • Engineering(all)
  • Applied Mathematics

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