TY - GEN
T1 - Temperature dependent mobility in strained graphene
AU - Shah, Raheel
AU - Mohiuddin, Tariq M.G.
PY - 2011
Y1 - 2011
N2 - Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb. Effect of temperature on graphene mobility under varying strain is studied. Non symmetric temperature dependence was observed for the two crystallographic orientations.
AB - Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb. Effect of temperature on graphene mobility under varying strain is studied. Non symmetric temperature dependence was observed for the two crystallographic orientations.
KW - Graphene
KW - Mobility
KW - Scattering
KW - Strain
UR - http://www.scopus.com/inward/record.url?scp=80755122846&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:80755122846
SN - 9789881925145
T3 - Proceedings of the World Congress on Engineering 2011, WCE 2011
SP - 1357
EP - 1362
BT - Proceedings of the World Congress on Engineering 2011, WCE 2011
T2 - World Congress on Engineering 2011, WCE 2011
Y2 - 6 July 2011 through 8 July 2011
ER -