Temperature dependent mobility in strained graphene

Raheel Shah*, Tariq M.G. Mohiuddin

*المؤلف المقابل لهذا العمل

نتاج البحث

2 اقتباسات (Scopus)


Impact of induced strain on charge carrier mobility is investigated for a monolayer graphene sheet. Mobility is computed within Born approximation by including impurity scattering, surface roughness effects and interaction with lattice phonons. Unlike its sSi counterpart, strained graphene shows a drop in mobility with increasing strain. Main reason for this effect is decrease in Fermi velocity due to induced distortions in the graphene honeycomb. Effect of temperature on graphene mobility under varying strain is studied. Non symmetric temperature dependence was observed for the two crystallographic orientations.

اللغة الأصليةEnglish
عنوان منشور المضيفProceedings of the World Congress on Engineering 2011, WCE 2011
عدد الصفحات6
حالة النشرPublished - 2011
الحدثWorld Congress on Engineering 2011, WCE 2011 - London
المدة: يوليو ٦ ٢٠١١يوليو ٨ ٢٠١١

سلسلة المنشورات

الاسمProceedings of the World Congress on Engineering 2011, WCE 2011
مستوى الصوت2


OtherWorld Congress on Engineering 2011, WCE 2011
الدولة/الإقليمUnited Kingdom

ASJC Scopus subject areas

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