Small signal analysis of resonant tunnel diodes in the bistable mode

A. Zarea; A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

Small signal analysis of resonant tunnel diodes in the bistable mode

A. Zarea^*, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

^*Corresponding author for this work

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

Original language	English
Title of host publication	European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	559-562
Number of pages	4
ISBN (Print)	0750300655
Publication status	Published - 1990
Event	20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom Duration: Sep 10 1990 → Sep 13 1990

Other

Other	20th European Solid State Device Research Conference, ESSDERC 1990
Country	United Kingdom
City	Nottingham
Period	9/10/90 → 9/13/90

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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@inproceedings{0e3cf09c4673465b8ee517342543bc9a,

title = "Small signal analysis of resonant tunnel diodes in the bistable mode",

abstract = "The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.",

author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

language = "English",

isbn = "0750300655",

pages = "559--562",

booktitle = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

note = "20th European Solid State Device Research Conference, ESSDERC 1990 ; Conference date: 10-09-1990 Through 13-09-1990",

}

TY - GEN

T1 - Small signal analysis of resonant tunnel diodes in the bistable mode

AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990

Y1 - 1990

N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

UR - http://www.scopus.com/inward/record.url?scp=0037857312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037857312&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0037857312

SN - 0750300655

SP - 559

EP - 562

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - 20th European Solid State Device Research Conference, ESSDERC 1990

Y2 - 10 September 1990 through 13 September 1990

ER -