Small signal analysis of resonant tunnel diodes in the bistable mode

A. Zarea*, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages559-562
Number of pages4
ISBN (Print)0750300655
Publication statusPublished - 1990
Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
Duration: Sep 10 1990Sep 13 1990

Other

Other20th European Solid State Device Research Conference, ESSDERC 1990
CountryUnited Kingdom
CityNottingham
Period9/10/909/13/90

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Fingerprint Dive into the research topics of 'Small signal analysis of resonant tunnel diodes in the bistable mode'. Together they form a unique fingerprint.

Cite this