Small signal analysis of resonant tunnel diodes in the bistable mode

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages559-562
Number of pages4
ISBN (Print)0750300655
Publication statusPublished - 1990
Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
Duration: Sep 10 1990Sep 13 1990

Other

Other20th European Solid State Device Research Conference, ESSDERC 1990
CountryUnited Kingdom
CityNottingham
Period9/10/909/13/90

Fingerprint

Tunnel diodes
Signal analysis
Cutoff frequency
Equivalent circuits
Natural frequencies

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Small signal analysis of resonant tunnel diodes in the bistable mode. In European Solid-State Device Research Conference (pp. 559-562). [5436295] IEEE Computer Society.

Small signal analysis of resonant tunnel diodes in the bistable mode. / Zarea, A.; Sellai, A.; Raven, M. S.; Steenson, D. P.; Chamberlain, J. M.; Henini, M.; Hughes, O. H.

European Solid-State Device Research Conference. IEEE Computer Society, 1990. p. 559-562 5436295.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zarea, A, Sellai, A, Raven, MS, Steenson, DP, Chamberlain, JM, Henini, M & Hughes, OH 1990, Small signal analysis of resonant tunnel diodes in the bistable mode. in European Solid-State Device Research Conference., 5436295, IEEE Computer Society, pp. 559-562, 20th European Solid State Device Research Conference, ESSDERC 1990, Nottingham, United Kingdom, 9/10/90.
Zarea A, Sellai A, Raven MS, Steenson DP, Chamberlain JM, Henini M et al. Small signal analysis of resonant tunnel diodes in the bistable mode. In European Solid-State Device Research Conference. IEEE Computer Society. 1990. p. 559-562. 5436295
Zarea, A. ; Sellai, A. ; Raven, M. S. ; Steenson, D. P. ; Chamberlain, J. M. ; Henini, M. ; Hughes, O. H. / Small signal analysis of resonant tunnel diodes in the bistable mode. European Solid-State Device Research Conference. IEEE Computer Society, 1990. pp. 559-562
@inproceedings{0e3cf09c4673465b8ee517342543bc9a,
title = "Small signal analysis of resonant tunnel diodes in the bistable mode",
abstract = "The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.",
author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",
year = "1990",
language = "English",
isbn = "0750300655",
pages = "559--562",
booktitle = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",

}

TY - GEN

T1 - Small signal analysis of resonant tunnel diodes in the bistable mode

AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990

Y1 - 1990

N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

UR - http://www.scopus.com/inward/record.url?scp=0037857312&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037857312&partnerID=8YFLogxK

M3 - Conference contribution

SN - 0750300655

SP - 559

EP - 562

BT - European Solid-State Device Research Conference

PB - IEEE Computer Society

ER -