Abstract
The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.
| Original language | English |
|---|---|
| Title of host publication | European Solid-State Device Research Conference |
| Publisher | IEEE Computer Society |
| Pages | 559-562 |
| Number of pages | 4 |
| ISBN (Print) | 0750300655 |
| Publication status | Published - 1990 |
| Event | 20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom Duration: Sep 10 1990 → Sep 13 1990 |
Other
| Other | 20th European Solid State Device Research Conference, ESSDERC 1990 |
|---|---|
| Country | United Kingdom |
| City | Nottingham |
| Period | 9/10/90 → 9/13/90 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
Cite this
Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Small signal analysis of resonant tunnel diodes in the bistable mode. In European Solid-State Device Research Conference (pp. 559-562). [5436295] IEEE Computer Society.