Small signal analysis of resonant tunnel diodes in the bistable mode

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages559-562
Number of pages4
ISBN (Print)0750300655
Publication statusPublished - 1990
Event20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom
Duration: Sep 10 1990Sep 13 1990

Other

Other20th European Solid State Device Research Conference, ESSDERC 1990
CountryUnited Kingdom
CityNottingham
Period9/10/909/13/90

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Zarea, A., Sellai, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1990). Small signal analysis of resonant tunnel diodes in the bistable mode. In European Solid-State Device Research Conference (pp. 559-562). [5436295] IEEE Computer Society.