Abstract
The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.
| Original language | English |
|---|---|
| Title of host publication | European Solid-State Device Research Conference |
| Publisher | IEEE Computer Society |
| Pages | 559-562 |
| Number of pages | 4 |
| ISBN (Print) | 0750300655 |
| Publication status | Published - 1990 |
| Event | 20th European Solid State Device Research Conference, ESSDERC 1990 - Nottingham, United Kingdom Duration: Sep 10 1990 → Sep 13 1990 |
Other
| Other | 20th European Solid State Device Research Conference, ESSDERC 1990 |
|---|---|
| Country | United Kingdom |
| City | Nottingham |
| Period | 9/10/90 → 9/13/90 |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
Cite this
Small signal analysis of resonant tunnel diodes in the bistable mode. / Zarea, A.; Sellai, A.; Raven, M. S.; Steenson, D. P.; Chamberlain, J. M.; Henini, M.; Hughes, O. H.
European Solid-State Device Research Conference. IEEE Computer Society, 1990. p. 559-562 5436295.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Small signal analysis of resonant tunnel diodes in the bistable mode
AU - Zarea, A.
AU - Sellai, A.
AU - Raven, M. S.
AU - Steenson, D. P.
AU - Chamberlain, J. M.
AU - Henini, M.
AU - Hughes, O. H.
PY - 1990
Y1 - 1990
N2 - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.
AB - The small signal impedance of GaAs/Al(Ga)As double-barrier resonant tunnel diodes has been measured and analyzed over a wide range of frequencies and for various d.c. bias values. The RTD equivalent circuit elements were obtained by measuring the impedance in the bistable region. The cut-off frequency and the self-resonant frequency were calculated and compared with direct measurements.
UR - http://www.scopus.com/inward/record.url?scp=0037857312&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037857312&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0037857312
SN - 0750300655
SP - 559
EP - 562
BT - European Solid-State Device Research Conference
PB - IEEE Computer Society
ER -