Abstract
This work reports the enhanced optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by sandwiching p-EBL with thin p-AlInN layers. The simulated results show that the internal quantum efficiency (IQE) and radiative recombination rate are remarkably improved as compared to conventional AlGaN-based p-EBL. The primary cause of this enhancement is the reduction of lattice mismatch between the electron blocking layer (EBL) and p-AlGaN due to the insertion of thin p-AlInN layers, which ultimately decreases the polarization effect. Moreover, p-AlInN layers also improved the hole injection efficiency via intra-band tunneling while hindered the electron leakage to the p-type layer. Interestingly, the proposed structure not only increased the IQE but also suppressed the efficiency droop dramatically.
Original language | English |
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Article number | 111389 |
Journal | Materials Research Bulletin |
Volume | 142 |
DOIs | |
Publication status | Published - Oct 2021 |
Externally published | Yes |
Keywords
- AlInN
- DUV LEDs
- Efficiency
- Polarization
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering