Sandwiching electron blocking layer with p-AlInN layer to enhance hole injection in AlGaN-based deep ultraviolet light-emitting diodes

Tariq Jamil, Muhammad Usman*, Habibullah Jamal

*المؤلف المقابل لهذا العمل

نتاج البحث: المساهمة في مجلةArticleمراجعة النظراء

5 اقتباسات (Scopus)

ملخص

This work reports the enhanced optoelectronic performance of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by sandwiching p-EBL with thin p-AlInN layers. The simulated results show that the internal quantum efficiency (IQE) and radiative recombination rate are remarkably improved as compared to conventional AlGaN-based p-EBL. The primary cause of this enhancement is the reduction of lattice mismatch between the electron blocking layer (EBL) and p-AlGaN due to the insertion of thin p-AlInN layers, which ultimately decreases the polarization effect. Moreover, p-AlInN layers also improved the hole injection efficiency via intra-band tunneling while hindered the electron leakage to the p-type layer. Interestingly, the proposed structure not only increased the IQE but also suppressed the efficiency droop dramatically.

اللغة الأصليةEnglish
رقم المقال111389
دوريةMaterials Research Bulletin
مستوى الصوت142
المعرِّفات الرقمية للأشياء
حالة النشرPublished - أكتوبر 2021
منشور خارجيًانعم

ASJC Scopus subject areas

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بصمة

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