Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz; Jorlandio F. Felix; Dler Jameel; Noor Al Saqri; Faisal S. Al Mashary; Haifaa M. Alghamdi; Hind M.A. Albalawi; David Taylor; Mohamed Henini

doi:10.1016/j.spmi.2015.08.028

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz, Jorlandio F. Felix, Dler Jameel, Noor Al Saqri, Faisal S. Al Mashary, Haifaa M. Alghamdi, Hind M.A. Albalawi, David Taylor, Mohamed Henini^*

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

Original language	English
Pages (from-to)	80-89
Number of pages	10
Journal	Superlattices and Microstructures
Volume	88
DOIs	https://doi.org/10.1016/j.spmi.2015.08.028
Publication status	Published - Dec 1 2015

Keywords

CV
DLTS
Furnace annealing
IV
Rapid thermal annealing

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2015.08.028

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Aziz, M., Felix, J. F., Jameel, D., Al Saqri, N., Al Mashary, F. S., Alghamdi, H. M., Albalawi, H. M. A., Taylor, D., & Henini, M. (2015). Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures. Superlattices and Microstructures, 88, 80-89. https://doi.org/10.1016/j.spmi.2015.08.028

Aziz, M, Felix, JF, Jameel, D, Al Saqri, N, Al Mashary, FS, Alghamdi, HM, Albalawi, HMA, Taylor, D & Henini, M 2015, 'Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures', Superlattices and Microstructures, vol. 88, pp. 80-89. https://doi.org/10.1016/j.spmi.2015.08.028

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title = "Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures",

abstract = "The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.",

keywords = "CV, DLTS, Furnace annealing, IV, Rapid thermal annealing",

author = "Mohsin Aziz and Felix, {Jorlandio F.} and Dler Jameel and {Al Saqri}, Noor and {Al Mashary}, {Faisal S.} and Alghamdi, {Haifaa M.} and Albalawi, {Hind M.A.} and David Taylor and Mohamed Henini",

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doi = "10.1016/j.spmi.2015.08.028",

language = "English",

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pages = "80--89",

journal = "Superlattices and Microstructures",

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T1 - Rapid thermal annealing

T2 - An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

AU - Aziz, Mohsin

AU - Felix, Jorlandio F.

AU - Jameel, Dler

AU - Al Saqri, Noor

AU - Al Mashary, Faisal S.

AU - Alghamdi, Haifaa M.

AU - Albalawi, Hind M.A.

AU - Taylor, David

AU - Henini, Mohamed

PY - 2015/12/1

Y1 - 2015/12/1

N2 - The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

AB - The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

KW - CV

KW - DLTS

KW - Furnace annealing

KW - IV

KW - Rapid thermal annealing

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SN - 0749-6036

VL - 88

SP - 80

EP - 89

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

ER -

Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Abstract

Keywords

ASJC Scopus subject areas

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