Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz, Jorlandio F. Felix, Dler Jameel, Noor Al Saqri, Faisal S. Al Mashary, Haifaa M. Alghamdi, Hind M.A. Albalawi, David Taylor, Mohamed Henini

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

Original languageEnglish
Pages (from-to)80-89
Number of pages10
JournalSuperlattices and Microstructures
Volume88
DOIs
Publication statusPublished - Dec 1 2015

Fingerprint

Tellurium
Rapid thermal annealing
tellurium
Heterojunctions
Electric properties
electrical properties
Annealing
annealing
Furnaces
Deep level transient spectroscopy
Electric potential
furnaces
Leakage currents
Capacitance
Defects
electric potential
gallium arsenide
leakage
capacitance
defects

Keywords

  • CV
  • DLTS
  • Furnace annealing
  • IV
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Rapid thermal annealing : An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures. / Aziz, Mohsin; Felix, Jorlandio F.; Jameel, Dler; Al Saqri, Noor; Al Mashary, Faisal S.; Alghamdi, Haifaa M.; Albalawi, Hind M.A.; Taylor, David; Henini, Mohamed.

In: Superlattices and Microstructures, Vol. 88, 01.12.2015, p. 80-89.

Research output: Contribution to journalArticle

Aziz, Mohsin ; Felix, Jorlandio F. ; Jameel, Dler ; Al Saqri, Noor ; Al Mashary, Faisal S. ; Alghamdi, Haifaa M. ; Albalawi, Hind M.A. ; Taylor, David ; Henini, Mohamed. / Rapid thermal annealing : An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures. In: Superlattices and Microstructures. 2015 ; Vol. 88. pp. 80-89.
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AU - Al Mashary, Faisal S.

AU - Alghamdi, Haifaa M.

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AU - Henini, Mohamed

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