Rapid thermal annealing: An efficient method to improve the electrical properties of tellurium compensated Interfacial Misfit GaSb/GaAs heterostructures

Mohsin Aziz, Jorlandio F. Felix, Dler Jameel, Noor Al Saqri, Faisal S. Al Mashary, Haifaa M. Alghamdi, Hind M.A. Albalawi, David Taylor, Mohamed Henini

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Abstract

The effect of thermal annealing on Te compensated Interfacial Misfit GaSb/GaAs heterostructures is investigated by using two different thermal annealing procedures, namely rapid thermal annealing and furnace annealing. The electrical properties of the devices are studied by using Current-Voltage, Capacitance-Voltage and Deep Level Transient Spectroscopy techniques. It is observed that rapid thermal annealing treatment is superior in terms of improvement of the electrical characteristics compared to furnace annealing treatment. The lowest leakage current and defect concentration are obtained when rapid thermal annealing is employed.

Original languageEnglish
Pages (from-to)80-89
Number of pages10
JournalSuperlattices and Microstructures
Volume88
DOIs
Publication statusPublished - Dec 1 2015

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Keywords

  • CV
  • DLTS
  • Furnace annealing
  • IV
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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