Multistate Magnetic Domain Wall Devices for Neuromorphic Computing

Rachid Sbiaa*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin-based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin-based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.

Original languageEnglish
Article number2100125
JournalPhysica Status Solidi - Rapid Research Letters
Volume15
Issue number7
DOIs
Publication statusPublished - Jul 2021
Externally publishedYes

Keywords

  • magnetic domain walls
  • magnetic random access memory
  • memristors
  • multibit per cell memory
  • neuromorphic computing
  • spin-transfer torque

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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