TY - JOUR
T1 - Multistate Magnetic Domain Wall Devices for Neuromorphic Computing
AU - Sbiaa, Rachid
N1 - Publisher Copyright:
© 2021 Wiley-VCH GmbH.
PY - 2021/5/31
Y1 - 2021/5/31
N2 - In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin-based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin-based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.
AB - In recent years, neuromorphic computing has been intensively investigated, to take over the conventional or von Neumann scheme. Herein, the advantages of memristors as neurons and synapses are discussed. After a brief introduction to biological neurons and synapses, focus is put on spin-based devices, including magnetic tunnel junction (MTJ) and domain wall devices. Certain materials and device designs aim at mimicking synapses’ functionality, whereas others gather both neurons and synapses. The advancements in spin-based memory applications are of great advantage for neuromorphic computing and their implementation is presented herein.
KW - magnetic domain walls
KW - magnetic random access memory
KW - memristors
KW - multibit per cell memory
KW - neuromorphic computing
KW - spin-transfer torque
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U2 - 10.1002/pssr.202100125
DO - 10.1002/pssr.202100125
M3 - Review article
AN - SCOPUS:85106679048
SN - 1862-6254
VL - 15
SP - 2100125
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 7
M1 - 2100125
ER -