Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby, B. Guzmán, F. S. Gard, T. C Q Noakes, P. Bailey, C. F. McConville

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

Original languageEnglish
Article number113412
Pages (from-to)1134121-1134124
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
Publication statusPublished - Mar 15 2002

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile'. Together they form a unique fingerprint.

  • Cite this

    Dowsett, M. G., Al-Harthi, S. H., Ormsby, T. J., Guzmán, B., Gard, F. S., Noakes, T. C. Q., Bailey, P., & McConville, C. F. (2002). Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. Physical Review B - Condensed Matter and Materials Physics, 65(11), 1134121-1134124. [113412].