Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile

M. G. Dowsett, S. H. Al-Harthi, T. J. Ormsby, B. Guzmán, F. S. Gard, T. C Q Noakes, P. Bailey, C. F. McConville

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A method to accurately determine the sputter yield of the matrix from the earliest stages of a sputter profile is described. Using the technique of medium-energy ion-scattering spectroscopy, this method provides data that enable a depth scale to be established from subnanometer depths onward. It may be adapted to samples containing a thin amorphous surface layer (e.g., a preamorphized shallow implant) or to crystalline surfaces containing a heavy-element marker layer. In this Brief Report we have used this method to interpret the near-surface profile using erosion-rate data obtained from a 1-keV boron implant into a germanium preamorphized silicon (001) surface.

Original languageEnglish
Article number113412
Pages (from-to)1134121-1134124
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number11
Publication statusPublished - Mar 15 2002

Fingerprint

Calibration
profiles
ion scattering
heavy elements
Germanium
markers
Boron
erosion
germanium
surface layers
boron
Silicon
Erosion
Spectroscopy
silicon
Scattering
Ions
matrices
Crystalline materials
spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Dowsett, M. G., Al-Harthi, S. H., Ormsby, T. J., Guzmán, B., Gard, F. S., Noakes, T. C. Q., ... McConville, C. F. (2002). Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. Physical Review B - Condensed Matter and Materials Physics, 65(11), 1134121-1134124. [113412].

Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. / Dowsett, M. G.; Al-Harthi, S. H.; Ormsby, T. J.; Guzmán, B.; Gard, F. S.; Noakes, T. C Q; Bailey, P.; McConville, C. F.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 11, 113412, 15.03.2002, p. 1134121-1134124.

Research output: Contribution to journalArticle

Dowsett, MG, Al-Harthi, SH, Ormsby, TJ, Guzmán, B, Gard, FS, Noakes, TCQ, Bailey, P & McConville, CF 2002, 'Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile', Physical Review B - Condensed Matter and Materials Physics, vol. 65, no. 11, 113412, pp. 1134121-1134124.
Dowsett, M. G. ; Al-Harthi, S. H. ; Ormsby, T. J. ; Guzmán, B. ; Gard, F. S. ; Noakes, T. C Q ; Bailey, P. ; McConville, C. F. / Establishing an accurate depth-scale calibration in the top few nanometers of an ultrashallow implant profile. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 65, No. 11. pp. 1134121-1134124.
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