Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures

Omar Alnemer, Helmy Ally, Aamna Alshehhi, Man Saadat, Tewfik Souier, Adel B. Gougam, Hasan Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

One of the key deliverables of using graphene as a channel in transistors is to achieve low source and drain parasitic contact resistance. Careful characterization of the surface of graphene is needed in order to improve understanding of the metal to graphene interface. In this paper, we employ conductive Atomic Force Microscope (C-AFM) to characterize the electrical properties of these wrinkles as a function of the applied force. At low forces, the wrinkles are more conductive than flat regions and at high forces the wrinkles have similar conductance as the flat regions. Graphene devices were fabricated and the total resistance of graphene in these devices was measured to be in the range 2ω to 10Mω. Additional research is planned to investigate if the wrinkles impact the electrical contact resistance of large area structures.

Original languageEnglish
Title of host publicationProceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013
Pages182-183
Number of pages2
DOIs
Publication statusPublished - 2013
Event2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013 - Abu Dhabi, United Arab Emirates
Duration: Mar 26 2013Mar 28 2013

Other

Other2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013
CountryUnited Arab Emirates
CityAbu Dhabi
Period3/26/133/28/13

Fingerprint

Graphene
Atomic force microscopy
Contact resistance
Transistors
Electric properties
Microscopes
Metals

ASJC Scopus subject areas

  • Control and Systems Engineering

Cite this

Alnemer, O., Ally, H., Alshehhi, A., Saadat, M., Souier, T., Gougam, A. B., & Nayfeh, H. (2013). Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures. In Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013 (pp. 182-183). [6527806] https://doi.org/10.1109/DTIS.2013.6527806

Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures. / Alnemer, Omar; Ally, Helmy; Alshehhi, Aamna; Saadat, Man; Souier, Tewfik; Gougam, Adel B.; Nayfeh, Hasan.

Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013. 2013. p. 182-183 6527806.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Alnemer, O, Ally, H, Alshehhi, A, Saadat, M, Souier, T, Gougam, AB & Nayfeh, H 2013, Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures. in Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013., 6527806, pp. 182-183, 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013, Abu Dhabi, United Arab Emirates, 3/26/13. https://doi.org/10.1109/DTIS.2013.6527806
Alnemer O, Ally H, Alshehhi A, Saadat M, Souier T, Gougam AB et al. Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures. In Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013. 2013. p. 182-183. 6527806 https://doi.org/10.1109/DTIS.2013.6527806
Alnemer, Omar ; Ally, Helmy ; Alshehhi, Aamna ; Saadat, Man ; Souier, Tewfik ; Gougam, Adel B. ; Nayfeh, Hasan. / Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures. Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013. 2013. pp. 182-183
@inproceedings{5493c97d271d427cb0a910a56bd9133f,
title = "Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures",
abstract = "One of the key deliverables of using graphene as a channel in transistors is to achieve low source and drain parasitic contact resistance. Careful characterization of the surface of graphene is needed in order to improve understanding of the metal to graphene interface. In this paper, we employ conductive Atomic Force Microscope (C-AFM) to characterize the electrical properties of these wrinkles as a function of the applied force. At low forces, the wrinkles are more conductive than flat regions and at high forces the wrinkles have similar conductance as the flat regions. Graphene devices were fabricated and the total resistance of graphene in these devices was measured to be in the range 2ω to 10Mω. Additional research is planned to investigate if the wrinkles impact the electrical contact resistance of large area structures.",
author = "Omar Alnemer and Helmy Ally and Aamna Alshehhi and Man Saadat and Tewfik Souier and Gougam, {Adel B.} and Hasan Nayfeh",
year = "2013",
doi = "10.1109/DTIS.2013.6527806",
language = "English",
isbn = "9781467360388",
pages = "182--183",
booktitle = "Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013",

}

TY - GEN

T1 - Electrical characteristics of graphene wrinkles extracted by conductive Atomic Force Microscopy and electrical measurements on kelvin structures

AU - Alnemer, Omar

AU - Ally, Helmy

AU - Alshehhi, Aamna

AU - Saadat, Man

AU - Souier, Tewfik

AU - Gougam, Adel B.

AU - Nayfeh, Hasan

PY - 2013

Y1 - 2013

N2 - One of the key deliverables of using graphene as a channel in transistors is to achieve low source and drain parasitic contact resistance. Careful characterization of the surface of graphene is needed in order to improve understanding of the metal to graphene interface. In this paper, we employ conductive Atomic Force Microscope (C-AFM) to characterize the electrical properties of these wrinkles as a function of the applied force. At low forces, the wrinkles are more conductive than flat regions and at high forces the wrinkles have similar conductance as the flat regions. Graphene devices were fabricated and the total resistance of graphene in these devices was measured to be in the range 2ω to 10Mω. Additional research is planned to investigate if the wrinkles impact the electrical contact resistance of large area structures.

AB - One of the key deliverables of using graphene as a channel in transistors is to achieve low source and drain parasitic contact resistance. Careful characterization of the surface of graphene is needed in order to improve understanding of the metal to graphene interface. In this paper, we employ conductive Atomic Force Microscope (C-AFM) to characterize the electrical properties of these wrinkles as a function of the applied force. At low forces, the wrinkles are more conductive than flat regions and at high forces the wrinkles have similar conductance as the flat regions. Graphene devices were fabricated and the total resistance of graphene in these devices was measured to be in the range 2ω to 10Mω. Additional research is planned to investigate if the wrinkles impact the electrical contact resistance of large area structures.

UR - http://www.scopus.com/inward/record.url?scp=84881140093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84881140093&partnerID=8YFLogxK

U2 - 10.1109/DTIS.2013.6527806

DO - 10.1109/DTIS.2013.6527806

M3 - Conference contribution

SN - 9781467360388

SP - 182

EP - 183

BT - Proceedings of the 2013 8th International Conference on Design and Technology of Integrated Systems in Nanoscale Era, DTIS 2013

ER -