Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

H. Meng; R. Sbiaa; M. A.K. Akhtar; R. S. Liu; V. B. Naik; C. C. Wang

doi:10.1063/1.3695168

Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

H. Meng^*, R. Sbiaa, M. A.K. Akhtar, R. S. Liu, V. B. Naik, C. C. Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

45 Citations (Scopus)

Abstract

We have investigated the electric field effects in low resistance perpendicular magnetic tunnel junction (MTJ) devices and found that the electric field can effectively reduce the coercivity (H _c) of free layer (FL) by 30 for a bias voltage V _b -0.2 V. In addition, the bias field (H _b) on free layer is almost linearly dependent on V _b yet independent on the device size. The demonstrated V _b dependences of H _c and H _b in low resistance MTJ devices present the potential to extend the scalability of the electric field assisted spin transfer torque magnetic random access memory and improve its access speed.

Original language	English
Article number	122405
Journal	Applied Physics Letters
Volume	100
Issue number	12
DOIs	https://doi.org/10.1063/1.3695168
Publication status	Published - Mar 19 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We have investigated the electric field effects in low resistance perpendicular magnetic tunnel junction (MTJ) devices and found that the electric field can effectively reduce the coercivity (H c) of free layer (FL) by 30 for a bias voltage V b -0.2 V. In addition, the bias field (H b) on free layer is almost linearly dependent on V b yet independent on the device size. The demonstrated V b dependences of H c and H b in low resistance MTJ devices present the potential to extend the scalability of the electric field assisted spin transfer torque magnetic random access memory and improve its access speed.",

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AU - Meng, H.

AU - Sbiaa, R.

AU - Akhtar, M. A.K.

AU - Liu, R. S.

AU - Naik, V. B.

AU - Wang, C. C.

PY - 2012/3/19

Y1 - 2012/3/19

N2 - We have investigated the electric field effects in low resistance perpendicular magnetic tunnel junction (MTJ) devices and found that the electric field can effectively reduce the coercivity (H c) of free layer (FL) by 30 for a bias voltage V b -0.2 V. In addition, the bias field (H b) on free layer is almost linearly dependent on V b yet independent on the device size. The demonstrated V b dependences of H c and H b in low resistance MTJ devices present the potential to extend the scalability of the electric field assisted spin transfer torque magnetic random access memory and improve its access speed.

AB - We have investigated the electric field effects in low resistance perpendicular magnetic tunnel junction (MTJ) devices and found that the electric field can effectively reduce the coercivity (H c) of free layer (FL) by 30 for a bias voltage V b -0.2 V. In addition, the bias field (H b) on free layer is almost linearly dependent on V b yet independent on the device size. The demonstrated V b dependences of H c and H b in low resistance MTJ devices present the potential to extend the scalability of the electric field assisted spin transfer torque magnetic random access memory and improve its access speed.

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Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

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