Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy

H. Meng, R. Sbiaa, M. A K Akhtar, R. S. Liu, V. B. Naik, C. C. Wang

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

We have investigated the electric field effects in low resistance perpendicular magnetic tunnel junction (MTJ) devices and found that the electric field can effectively reduce the coercivity (H c) of free layer (FL) by 30 for a bias voltage V b -0.2 V. In addition, the bias field (H b) on free layer is almost linearly dependent on V b yet independent on the device size. The demonstrated V b dependences of H c and H b in low resistance MTJ devices present the potential to extend the scalability of the electric field assisted spin transfer torque magnetic random access memory and improve its access speed.

Original languageEnglish
Article number122405
JournalApplied Physics Letters
Volume100
Issue number12
DOIs
Publication statusPublished - Mar 19 2012

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low resistance
tunnel junctions
anisotropy
electric fields
random access memory
coercivity
torque
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. / Meng, H.; Sbiaa, R.; Akhtar, M. A K; Liu, R. S.; Naik, V. B.; Wang, C. C.

In: Applied Physics Letters, Vol. 100, No. 12, 122405, 19.03.2012.

Research output: Contribution to journalArticle

Meng, H. ; Sbiaa, R. ; Akhtar, M. A K ; Liu, R. S. ; Naik, V. B. ; Wang, C. C. / Electric field effects in low resistance CoFeB-MgO magnetic tunnel junctions with perpendicular anisotropy. In: Applied Physics Letters. 2012 ; Vol. 100, No. 12.
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