TY - JOUR
T1 - The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer
AU - Usman, Muhammad
AU - Jamil, Tariq
N1 - Publisher Copyright:
© 2022, The Minerals, Metals & Materials Society.
PY - 2022/11
Y1 - 2022/11
N2 - In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the electron overflow but also facilitates hole transport. This is attributed to the decreased lattice mismatching between epilayers, i.e., LQB and p-AlGaN. Our proposed p-doped AlInN LQB LED shows reduced efficiency droop at 200 A/cm2. Additionally, the peak emission spectra (at 266 nm) of p-doped AlInN LQB LED are enhanced by almost twice that of the conventional LED. Our proposed LED has no electron blocking layer (EBL) because the p-doped AlInN LQB serves two purposes, i.e., as both LQB and effective EBL.
AB - In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the electron overflow but also facilitates hole transport. This is attributed to the decreased lattice mismatching between epilayers, i.e., LQB and p-AlGaN. Our proposed p-doped AlInN LQB LED shows reduced efficiency droop at 200 A/cm2. Additionally, the peak emission spectra (at 266 nm) of p-doped AlInN LQB LED are enhanced by almost twice that of the conventional LED. Our proposed LED has no electron blocking layer (EBL) because the p-doped AlInN LQB serves two purposes, i.e., as both LQB and effective EBL.
KW - AlInN
KW - deep ultraviolet
KW - internal quantum efficiency
KW - light-emitting diodes
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UR - https://www.mendeley.com/catalogue/1fa0df3c-d801-32d1-89e7-a149901e92f5/
U2 - 10.1007/s11664-022-09869-0
DO - 10.1007/s11664-022-09869-0
M3 - Article
AN - SCOPUS:85137984054
SN - 0361-5235
VL - 51
SP - 6222
EP - 6227
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 11
ER -