The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer

Muhammad Usman*, Tariq Jamil

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the electron overflow but also facilitates hole transport. This is attributed to the decreased lattice mismatching between epilayers, i.e., LQB and p-AlGaN. Our proposed p-doped AlInN LQB LED shows reduced efficiency droop at 200 A/cm2. Additionally, the peak emission spectra (at 266 nm) of p-doped AlInN LQB LED are enhanced by almost twice that of the conventional LED. Our proposed LED has no electron blocking layer (EBL) because the p-doped AlInN LQB serves two purposes, i.e., as both LQB and effective EBL.

Original languageEnglish
JournalJournal of Electronic Materials
Publication statusAccepted/In press - 2022
Externally publishedYes


  • AlInN
  • deep ultraviolet
  • internal quantum efficiency
  • light-emitting diodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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