The Effect of p-Doped AlInN Last Quantum Barrier on Carrier Concentration of 266 nm Light-Emitting Diodes Without Electron Blocking Layer

In deep ultraviolet light-emitting diodes (DUV LEDs), we numerically investigate the effect of p-doped AlInN last quantum barrier (LQB). The p-doped AlInN LQB not only suppresses the electron overflow but also facilitates hole transport. This is attributed to the decreased lattice mismatching between epilayers, i.e., LQB and p-AlGaN. Our proposed p-doped AlInN LQB LED shows reduced efficiency droop at 200 A/cm². Additionally, the peak emission spectra (at 266 nm) of p-doped AlInN LQB LED are enhanced by almost twice that of the conventional LED. Our proposed LED has no electron blocking layer (EBL) because the p-doped AlInN LQB serves two purposes, i.e., as both LQB and effective EBL.