Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

A. Zarea; A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1049/el:19900977

Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

9 اقتباسات (Scopus)

ملخص

The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R_s, C and L associated with the device structure.

اللغة الأصلية	English
الصفحات (من إلى)	1522-1523
عدد الصفحات	2
دورية	Electronics Letters
مستوى الصوت	26
رقم الإصدار	18
المعرِّفات الرقمية للأشياء	https://doi.org/10.1049/el:19900977
حالة النشر	Published - يناير 1990
منشور خارجيًا	نعم

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???subjectarea.asjc.2200.2208???

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10.1049/el:19900977

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@article{81f1ebf2cb914c839807df23b8c445fd,

title = "Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region",

abstract = "The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.",

keywords = "Semiconductor devices and materials, Tunnel diode",

author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

month = jan,

doi = "10.1049/el:19900977",

language = "English",

volume = "26",

pages = "1522--1523",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "18",

}

TY - JOUR

T1 - Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990/1

Y1 - 1990/1

N2 - The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.

AB - The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.

KW - Semiconductor devices and materials

KW - Tunnel diode

UR - http://www.scopus.com/inward/record.url?scp=0025468609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025468609&partnerID=8YFLogxK

U2 - 10.1049/el:19900977

DO - 10.1049/el:19900977

M3 - Article

AN - SCOPUS:0025468609

SN - 0013-5194

VL - 26

SP - 1522

EP - 1523

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

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