Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

A. Zarea; A. Sellai; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1049/el:19900977

Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, R_s, C and L associated with the device structure.

Original language	English
Pages (from-to)	1522-1523
Number of pages	2
Journal	Electronics Letters
Volume	26
Issue number	18
DOIs	https://doi.org/10.1049/el:19900977
Publication status	Published - Jan 1990

Keywords

Semiconductor devices and materials
Tunnel diode

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19900977

Cite this

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abstract = "The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.",

keywords = "Semiconductor devices and materials, Tunnel diode",

author = "A. Zarea and A. Sellai and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

year = "1990",

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doi = "10.1049/el:19900977",

language = "English",

volume = "26",

pages = "1522--1523",

journal = "Electronics Letters",

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AU - Zarea, A.

AU - Sellai, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1990/1

Y1 - 1990/1

N2 - The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.

AB - The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.

KW - Semiconductor devices and materials

KW - Tunnel diode

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JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

Abstract

Keywords

ASJC Scopus subject areas

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