The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.
|Number of pages||2|
|Publication status||Published - Jan 1990|
- Semiconductor devices and materials
- Tunnel diode
ASJC Scopus subject areas
- Electrical and Electronic Engineering