Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region

A. Zarea, A. Sellai, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The small signal impedance of GaAs/Al(Ga)As doublebarrier resonant tunnel diodes has been measured and analysed over a wide range of frequencies and for various DC bias values. A method is introduced to evaluate the equivalent circuit parameters, the cut-off frequency and the self-resonant frequency. This also yields intrinsic values of R, Rs, C and L associated with the device structure.

Original languageEnglish
Pages (from-to)1522-1523
Number of pages2
JournalElectronics Letters
Volume26
Issue number18
DOIs
Publication statusPublished - Jan 1990
Externally publishedYes

Keywords

  • Semiconductor devices and materials
  • Tunnel diode

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint

Dive into the research topics of 'Impedance Analysis of GaAs/AI(Ga) As Resonant Tunnel Diodes in the NDR Region'. Together they form a unique fingerprint.

Cite this