Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville; S. H. Al-Harthi; M. G. Dowsett; F. S. Gard; T. J. Ormsby; B. Guzman; T. C.Q. Noakes; P. Bailey

doi:10.1116/1.1491987

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville^*, S. H. Al-Harthi, M. G. Dowsett, F. S. Gard, T. J. Ormsby, B. Guzman, T. C.Q. Noakes, P. Bailey

^*المؤلف المقابل لهذا العمل

Physics

نتاج البحث: المساهمة في مجلة › Conference article › مراجعة النظراء

4 اقتباسات (Scopus)

ملخص

An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

اللغة الأصلية	English
الصفحات (من إلى)	1690-1698
عدد الصفحات	9
دورية	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
مستوى الصوت	20
رقم الإصدار	4
المعرِّفات الرقمية للأشياء	https://doi.org/10.1116/1.1491987
حالة النشر	Published - يوليو 2002
الحدث	Proceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States المدة: يناير ٦ ٢٠٠٢ → يناير ١٠ ٢٠٠٢

ASJC Scopus subject areas

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???subjectarea.asjc.2200.2208???

الوصول إلى المستند

10.1116/1.1491987

الملفات والروابط الأخرى

قم بذكر هذا

McConville, C. F., Al-Harthi, S. H., Dowsett, M. G., Gard, F. S., Ormsby, T. J., Guzman, B., Noakes, T. C. Q., & Bailey, P. (2002). Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(4), 1690-1698. https://doi.org/10.1116/1.1491987

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. / McConville, C. F.; Al-Harthi, S. H.; Dowsett, M. G. وآخرون.
في: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, المجلد 20, رقم 4, ٠٧.٢٠٠٢, صفحة 1690-1698.

نتاج البحث: المساهمة في مجلة › Conference article › مراجعة النظراء

McConville, CF, Al-Harthi, SH, Dowsett, MG, Gard, FS, Ormsby, TJ, Guzman, B, Noakes, TCQ & Bailey, P 2002, 'Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, المجلد 20, رقم 4, الصفحات 1690-1698. https://doi.org/10.1116/1.1491987

McConville CF, Al-Harthi SH, Dowsett MG, Gard FS, Ormsby TJ, Guzman B وآخرون. Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 يوليو;20(4):1690-1698. doi: 10.1116/1.1491987

McConville, C. F. ; Al-Harthi, S. H. ; Dowsett, M. G. وآخرون. / Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. في: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2002 ; المجلد 20, رقم 4. الصفحات 1690-1698.

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abstract = "An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.",

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AU - McConville, C. F.

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AU - Dowsett, M. G.

AU - Gard, F. S.

AU - Ormsby, T. J.

AU - Guzman, B.

AU - Noakes, T. C.Q.

AU - Bailey, P.

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AB - An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

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Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

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ASJC Scopus subject areas

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