Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering

C. F. McConville, S. H. Al-Harthi, M. G. Dowsett, F. S. Gard, T. J. Ormsby, B. Guzman, T. C Q Noakes, P. Bailey

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.

Original languageEnglish
Pages (from-to)1690-1698
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
Publication statusPublished - Jul 2002

Fingerprint

ion scattering
Secondary ion mass spectrometry
secondary ion mass spectrometry
erosion
Erosion
Scattering
Ions
profiles
Silicon
energy
dosage
silicon

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Determination of the erosion rate in the transient region of an ultralow energy secondary ion mass spectrometry profile using medium energy ion scattering. / McConville, C. F.; Al-Harthi, S. H.; Dowsett, M. G.; Gard, F. S.; Ormsby, T. J.; Guzman, B.; Noakes, T. C Q; Bailey, P.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1690-1698.

Research output: Contribution to journalArticle

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