An application of MEIS was used to demonstrate an accurate measurement of the dose dependent sputter yield of silicon during the surface transient regime of a SIMS profile. It was demonstrated how these data can be used for profile correction in the increasingly important top few nanometers of an ultrashallow implant profile and achieve quantitative agreement with other measurements.
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Jul 2002|
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)