Yield in inhomogeneous PtSi-n-Si Schottky photodetectors

A. Sellai, P. Dawson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

Original languageEnglish
Pages (from-to)372-375
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume567
Issue number1 SPEC. ISS.
DOIs
Publication statusPublished - Nov 1 2006

Fingerprint

Photodetectors
photometers
edge detection
thermionic emission
detectors
electric potential
normal density functions
Detectors
Thermionic emission
cut-off
capacitance
distribution functions
Gaussian distribution
Edge detection
Current voltage characteristics
deviation
Temperature
Distribution functions
temperature
Capacitance

Keywords

  • Quantum efficiency
  • Schottky detectors
  • Silicide structures

ASJC Scopus subject areas

  • Instrumentation
  • Nuclear and High Energy Physics

Cite this

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abstract = "The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.",
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T1 - Yield in inhomogeneous PtSi-n-Si Schottky photodetectors

AU - Sellai, A.

AU - Dawson, P.

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N2 - The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

AB - The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

KW - Quantum efficiency

KW - Schottky detectors

KW - Silicide structures

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

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