Yield in inhomogeneous PtSi-n-Si Schottky photodetectors

A. Sellai; P. Dawson

doi:10.1016/j.nima.2006.05.147

Yield in inhomogeneous PtSi-n-Si Schottky photodetectors

A. Sellai^*, P. Dawson

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

Original language	English
Pages (from-to)	372-375
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	567
Issue number	1 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nima.2006.05.147
Publication status	Published - Nov 1 2006

Keywords

Quantum efficiency
Schottky detectors
Silicide structures

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2006.05.147

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abstract = "The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.",

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AU - Sellai, A.

AU - Dawson, P.

PY - 2006/11/1

Y1 - 2006/11/1

N2 - The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

AB - The electrical characteristics (current-voltage and capacitance-voltage) of PtSi-Si Schottky detectors annealed at different temperatures are found to be qualitatively similar. They all show deviations from the ideal behavior predicted by thermionic emission theory. The variations in the barrier height, which is significantly temperature dependent, are well fitted to a single Gaussian distribution function. The estimated efficiency of these detectors is shown to be only slightly sensitive to the presence of such barrier fluctuations except for very low temperatures and at wavelengths near the cut-off detection edge.

KW - Quantum efficiency

KW - Schottky detectors

KW - Silicide structures

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VL - 567

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JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

IS - 1 SPEC. ISS.

ER -

Yield in inhomogeneous PtSi-n-Si Schottky photodetectors

Abstract

Keywords

ASJC Scopus subject areas

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