Threshold field for switching the de vries SA* phase in a low molar mass organosiloxane material

Carlo Carboni; Abraham K. George; Wafa Al-Shizawi; Michael W. Zoghaib; Jawad Naciri

doi:10.1080/02678292.2010.519058

Threshold field for switching the de vries S_A^* phase in a low molar mass organosiloxane material

Carlo Carboni^*, Abraham K. George, Wafa Al-Shizawi, Michael W. Zoghaib, Jawad Naciri

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The existence of a threshold field for the onset of switching in the organosiloxane material, ETSiKN65, has been investigated. This material displays a de Vries smectic A^* type phase, and the presence of the threshold confers an anti-ferroelectric-like response. However, it has been found that the value of the threshold depends on the thickness of the specimen, in fact it vanishes altogether if the specimen is more than 20 μm thick. It is concluded that the threshold is due to a complex anchoring mechanism at the interface with the cell walls.

Original language	English
Pages (from-to)	1427-1431
Number of pages	5
Journal	Liquid Crystals
Volume	37
Issue number	11
DOIs	https://doi.org/10.1080/02678292.2010.519058
Publication status	Published - Nov 2010

Keywords

De Vries phase
Organosiloxane

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1080/02678292.2010.519058

Cite this

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title = "Threshold field for switching the de vries SA* phase in a low molar mass organosiloxane material",

abstract = "The existence of a threshold field for the onset of switching in the organosiloxane material, ETSiKN65, has been investigated. This material displays a de Vries smectic A* type phase, and the presence of the threshold confers an anti-ferroelectric-like response. However, it has been found that the value of the threshold depends on the thickness of the specimen, in fact it vanishes altogether if the specimen is more than 20 μm thick. It is concluded that the threshold is due to a complex anchoring mechanism at the interface with the cell walls.",

keywords = "De Vries phase, Organosiloxane",

author = "Carlo Carboni and George, {Abraham K.} and Wafa Al-Shizawi and Zoghaib, {Michael W.} and Jawad Naciri",

note = "Funding Information: This work was supported by the Sultan Qaboos University (grant number IG/SCI/PHYS/09/03) and by the US Office of Naval Research.",

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AU - Carboni, Carlo

AU - George, Abraham K.

AU - Al-Shizawi, Wafa

AU - Zoghaib, Michael W.

AU - Naciri, Jawad

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PY - 2010/11

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N2 - The existence of a threshold field for the onset of switching in the organosiloxane material, ETSiKN65, has been investigated. This material displays a de Vries smectic A* type phase, and the presence of the threshold confers an anti-ferroelectric-like response. However, it has been found that the value of the threshold depends on the thickness of the specimen, in fact it vanishes altogether if the specimen is more than 20 μm thick. It is concluded that the threshold is due to a complex anchoring mechanism at the interface with the cell walls.

AB - The existence of a threshold field for the onset of switching in the organosiloxane material, ETSiKN65, has been investigated. This material displays a de Vries smectic A* type phase, and the presence of the threshold confers an anti-ferroelectric-like response. However, it has been found that the value of the threshold depends on the thickness of the specimen, in fact it vanishes altogether if the specimen is more than 20 μm thick. It is concluded that the threshold is due to a complex anchoring mechanism at the interface with the cell walls.

KW - De Vries phase

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