Temperature dependence of dark current in a p-i-n photodiode incorporating a resonant tunneling structure

Azzouz Sellai, Mohamed Henini, Zahir Ouennoughi

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Analyses of the slope variations, as a function of temperature, of the dark current-voltage curves obtained in the case of p-i-n diodes incorporating in their intrinsic region a double barrier single quantum well (QW) structure indicate that below the flat band condition a conduction mechanism by tunneling assisted by recombination centers prevails over most of the temperature range considered (20-300 K). Above the flat band condition and for temperatures below 180 K, negative differential resistance (NDR) regions displaying Z-shaped bistability were observed. The appearance of these NDRs is attributed to resonant tunneling of holes via the lowest light-hole subband in the QW and electrons via the second quasi-bound level in the conduction band.

Original languageEnglish
Pages (from-to)210-214
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume208
Issue number1
DOIs
Publication statusPublished - Jan 2011

Keywords

  • dark current
  • electrical conduction
  • p-i-n diodes
  • photodiodes
  • resonant tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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