Rydberg energy levels and quantum defects of B II, Ge II, Si II of subgroups III and IV

Ejaz Ahmed, Salman Raza, M. Noman Hameed, Muhammad Farooq, Jehan Akbar

Research output: Contribution to journalArticlepeer-review

Abstract

Theoretical computations of Rydberg energy levels series and atomic lifetimes for singly ionized boron (B II), silicon (Si II), and germanium (Ge II) have been performed. In the theoretical computation weakest bound electron potential model theory (WBEPMT) is employed. Regularities of changes in quantum defects for the following Rydberg states series: 2sns(1S0), 2snp (3Po0), 2snf(3Fo2,3Fo3,3Fo4), 2snf(1Fo3) of B II; 3s2ns(2S1/2), 3s2nd(2D3/2,5/2), 3s2nf(2 o F5/2,7/2), 3s2ng(2G7/2,9/2) of Si II; and 4s2nf(2Fo5/2), 4s2nf(2Fo7/2), 4s2ng(2G7/2,9/2) of Ge II, up to n = 50 are presented. The atomic lifetimes of the following series: 1s22sns(1S0), 1s22snp(3Po1), 1s22snd (1D2) of B II; 3s2ns(2S1/2), 3s2nf(2 o F5/2,7/2) of Si II; and 4s2ns(2S1/2) of Ge II are predicted with good accuracy. Some high-lying Rydberg energy levels and atomic lifetimes have been presented for the first time. The series for which Rydberg energy levels are computed in this work are unperturbed series.
Original languageEnglish
Pages (from-to)274-286
Number of pages13
JournalCanadian Journal of Physics
Volume98
Issue number3
DOIs
Publication statusPublished - 2020

Keywords

  • Atomic lifetime
  • Principal quantum number
  • Quantum defect
  • Rydberg atom
  • Rydberg energy level
  • Weakest bound electron potential model theory (WBEPMT)

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