Reversible spin storage in metal oxide-fullerene heterojunctions

T. Moorsom; M. Rogers; I. Scivetti; S. Bandaru; G. Teobaldi; M. Valvidares; M. Flokstra; S. Lee; R. Stewart; T. Prokscha; P. Gargiani; N. Alosaimi; G. Stefanou; M. Ali; F. Al Ma'Mari; G. Burnell; B. J. Hickey; O. Cespedes

doi:10.1126/sciadv.aax1085

Reversible spin storage in metal oxide-fullerene heterojunctions

T. Moorsom, M. Rogers, I. Scivetti^*, S. Bandaru, G. Teobaldi, M. Valvidares, M. Flokstra, S. Lee, R. Stewart, T. Prokscha, P. Gargiani, N. Alosaimi, G. Stefanou, M. Ali, F. Al Ma'Mari, G. Burnell, B. J. Hickey, O. Cespedes

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We show that hybrid MnO_x/C₆₀ heterojunctions can be used to design a storage device for spin-polarized charge: a spin capacitor. Hybridization at the carbon-metal oxide interface leads to spin-polarized charge trapping after an applied voltage or photocurrent. Strong electronic structure changes, including a 1-eV energy shift and spin polarization in the C₆₀ lowest unoccupied molecular orbital, are then revealed by x-ray absorption spectroscopy, in agreement with density functional theory simulations. Muon spin spectroscopy measurements give further independent evidence of local spin ordering and magnetic moments optically/electronically stored at the heterojunctions. These spin-polarized states dissipate when shorting the electrodes. The spin storage decay time is controlled by magnetic ordering at the interface, leading to coherence times of seconds to hours even at room temperature.

Original language	English
Article number	eaax1085
Journal	Science advances
Volume	6
Issue number	12
DOIs	https://doi.org/10.1126/sciadv.aax1085
Publication status	Published - 2020

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Moorsom, T., Rogers, M., Scivetti, I., Bandaru, S., Teobaldi, G., Valvidares, M., Flokstra, M., Lee, S., Stewart, R., Prokscha, T., Gargiani, P., Alosaimi, N., Stefanou, G., Ali, M., Al Ma'Mari, F., Burnell, G., Hickey, B. J., & Cespedes, O. (2020). Reversible spin storage in metal oxide-fullerene heterojunctions. Science advances, 6(12), [eaax1085]. https://doi.org/10.1126/sciadv.aax1085

Moorsom, T, Rogers, M, Scivetti, I, Bandaru, S, Teobaldi, G, Valvidares, M, Flokstra, M, Lee, S, Stewart, R, Prokscha, T, Gargiani, P, Alosaimi, N, Stefanou, G, Ali, M, Al Ma'Mari, F, Burnell, G, Hickey, BJ & Cespedes, O 2020, 'Reversible spin storage in metal oxide-fullerene heterojunctions', Science advances, vol. 6, no. 12, eaax1085. https://doi.org/10.1126/sciadv.aax1085

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title = "Reversible spin storage in metal oxide-fullerene heterojunctions",

abstract = "We show that hybrid MnOx/C60 heterojunctions can be used to design a storage device for spin-polarized charge: a spin capacitor. Hybridization at the carbon-metal oxide interface leads to spin-polarized charge trapping after an applied voltage or photocurrent. Strong electronic structure changes, including a 1-eV energy shift and spin polarization in the C60 lowest unoccupied molecular orbital, are then revealed by x-ray absorption spectroscopy, in agreement with density functional theory simulations. Muon spin spectroscopy measurements give further independent evidence of local spin ordering and magnetic moments optically/electronically stored at the heterojunctions. These spin-polarized states dissipate when shorting the electrodes. The spin storage decay time is controlled by magnetic ordering at the interface, leading to coherence times of seconds to hours even at room temperature.",

author = "T. Moorsom and M. Rogers and I. Scivetti and S. Bandaru and G. Teobaldi and M. Valvidares and M. Flokstra and S. Lee and R. Stewart and T. Prokscha and P. Gargiani and N. Alosaimi and G. Stefanou and M. Ali and {Al Ma'Mari}, F. and G. Burnell and Hickey, {B. J.} and O. Cespedes",

note = "Funding Information: This work was supported by EPSRC grant nos. EP/M000923/1, EP/K036408/1, and EP/I004483/1. M.V. acknowledges Mineco grant FIS2016-7859-C3-2-R (AEI/FEDER, UE). ALBA beamtime access via proposal IDs (2017092385 and/or 2015091530). We acknowledge use of the N8 High Performance Computing (HPC) (EPSRC EP/K000225/1), ARCHER (via the UK Car-Parrinello Consortium, EP/K013610/1 and EP/P022189/1), and U.K. Materials and Molecular Modelling Hub (EPSRC EP/P020194/1) HCP facilities. F.A.M. thanks Sultan Qaboos University for support with a travel grant. Publisher Copyright: Copyright {\textcopyright} 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).",

year = "2020",

doi = "10.1126/sciadv.aax1085",

language = "English",

volume = "6",

journal = "Science advances",

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publisher = "American Association for the Advancement of Science",

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T1 - Reversible spin storage in metal oxide-fullerene heterojunctions

AU - Moorsom, T.

AU - Rogers, M.

AU - Scivetti, I.

AU - Bandaru, S.

AU - Teobaldi, G.

AU - Valvidares, M.

AU - Flokstra, M.

AU - Lee, S.

AU - Stewart, R.

AU - Prokscha, T.

AU - Gargiani, P.

AU - Alosaimi, N.

AU - Stefanou, G.

AU - Ali, M.

AU - Al Ma'Mari, F.

AU - Burnell, G.

AU - Hickey, B. J.

AU - Cespedes, O.

N1 - Funding Information: This work was supported by EPSRC grant nos. EP/M000923/1, EP/K036408/1, and EP/I004483/1. M.V. acknowledges Mineco grant FIS2016-7859-C3-2-R (AEI/FEDER, UE). ALBA beamtime access via proposal IDs (2017092385 and/or 2015091530). We acknowledge use of the N8 High Performance Computing (HPC) (EPSRC EP/K000225/1), ARCHER (via the UK Car-Parrinello Consortium, EP/K013610/1 and EP/P022189/1), and U.K. Materials and Molecular Modelling Hub (EPSRC EP/P020194/1) HCP facilities. F.A.M. thanks Sultan Qaboos University for support with a travel grant. Publisher Copyright: Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY).

PY - 2020

Y1 - 2020

N2 - We show that hybrid MnOx/C60 heterojunctions can be used to design a storage device for spin-polarized charge: a spin capacitor. Hybridization at the carbon-metal oxide interface leads to spin-polarized charge trapping after an applied voltage or photocurrent. Strong electronic structure changes, including a 1-eV energy shift and spin polarization in the C60 lowest unoccupied molecular orbital, are then revealed by x-ray absorption spectroscopy, in agreement with density functional theory simulations. Muon spin spectroscopy measurements give further independent evidence of local spin ordering and magnetic moments optically/electronically stored at the heterojunctions. These spin-polarized states dissipate when shorting the electrodes. The spin storage decay time is controlled by magnetic ordering at the interface, leading to coherence times of seconds to hours even at room temperature.

AB - We show that hybrid MnOx/C60 heterojunctions can be used to design a storage device for spin-polarized charge: a spin capacitor. Hybridization at the carbon-metal oxide interface leads to spin-polarized charge trapping after an applied voltage or photocurrent. Strong electronic structure changes, including a 1-eV energy shift and spin polarization in the C60 lowest unoccupied molecular orbital, are then revealed by x-ray absorption spectroscopy, in agreement with density functional theory simulations. Muon spin spectroscopy measurements give further independent evidence of local spin ordering and magnetic moments optically/electronically stored at the heterojunctions. These spin-polarized states dissipate when shorting the electrodes. The spin storage decay time is controlled by magnetic ordering at the interface, leading to coherence times of seconds to hours even at room temperature.

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JO - Science advances

JF - Science advances

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ER -

Reversible spin storage in metal oxide-fullerene heterojunctions

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