Multistate storage in dual spin valves with perpendicular magnetic anisotropy

Randall Law, Rachid Sbiaa, Thomas Liew, Tow Chong Chong

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report the tunable separation of four distinct resistance levels in dual spin valves (DSV) with perpendicular magnetic anisotropy based on Co/Pd and CoFe/Pd multilayers. An optimal giant magnetoresistance (GMR) of 15.2% in the current in-plane geometry was obtained. By varying the spin filter layer thicknesses at the interfaces of one Cu spacer layer from 2 to 6 Å, a linear dependence of GMR across the selected spacer layer was demonstrated without affecting the GMR contribution across the second Cu spacer layer in the DSV. Using this strategy, the intermediate resistance levels in a four-state perpendicular DSV can be adjusted independently, thus creating flexible platform for multistate storage.

Original languageEnglish
Article number103911
JournalJournal of Applied Physics
Volume105
Issue number10
DOIs
Publication statusPublished - 2009

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spacers
anisotropy
platforms
filters
geometry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Multistate storage in dual spin valves with perpendicular magnetic anisotropy. / Law, Randall; Sbiaa, Rachid; Liew, Thomas; Chong, Tow Chong.

In: Journal of Applied Physics, Vol. 105, No. 10, 103911, 2009.

Research output: Contribution to journalArticle

Law, Randall ; Sbiaa, Rachid ; Liew, Thomas ; Chong, Tow Chong. / Multistate storage in dual spin valves with perpendicular magnetic anisotropy. In: Journal of Applied Physics. 2009 ; Vol. 105, No. 10.
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