Multi-level domain wall memory in constricted magnetic nanowires

R. Sbiaa, S. N. Piramanayagam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report a new type of multibit per cell (MBPC) magnetic memory wherein the movement and position of domain wall (DW) can be controlled precisely using spin polarized current. Out of two investigated configurations, the one with in-plane magnetization offers faster DW motion, and hence is suitable for high-speed applications, although stability may be an issue. In contrast, stable DWs were observed in the perpendicular configuration. Furthermore, the DW position can be controlled through a sequence of pulses with different magnitudes. Controlling the DW position offers a novel MBPC magnetic memory with high performance compared to other solid state memories.

Original languageEnglish
Pages (from-to)1347-1351
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume114
Issue number4
DOIs
Publication statusPublished - Mar 2014

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Domain walls
Nanowires
Data storage equipment
Magnetization

ASJC Scopus subject areas

  • Materials Science(all)
  • Chemistry(all)

Cite this

Multi-level domain wall memory in constricted magnetic nanowires. / Sbiaa, R.; Piramanayagam, S. N.

In: Applied Physics A: Materials Science and Processing, Vol. 114, No. 4, 03.2014, p. 1347-1351.

Research output: Contribution to journalArticle

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