Magnetoresistance and switching properties of Co-Fe/Pd-based perpendicular anisotropy single-and dual-spin valves

Randall Law, Rachid Sbiaa, Thomas Liew, Tow Chong Chong

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23 Citations (Scopus)

Abstract

Switching characteristics and magnetoresistance of spin valves with perpendicular anisotropy based on Co-Fe/Pd multilayers deposited by ultrahigh vacuum (UHV) sputtering have been studied. In unpatterned thin films without exchange bias, high current-in-plane giant magnetoresistance (CIP-GMR) of 9.7% and 15.2% in single-spin valves (SSVs) and dual-spin valves (DSVs) was measured, a significant improvement over previous work. We describe the effects of a Ta seed layer and postdeposition annealing on the perpendicular anisotropy and magnetoresistance of Co-Fe/Pd spin valves, which can be attributed to improvements in the fcc (111) orientation of Pd and the formation of Co-Pd alloys at the Co-Fe/Pd interfaces, respectively. We also show that the coercivity of the layers can be tuned by varying the Co-Fe alloy composition in the multilayers, and describe the minor loops of perpendicular DSVs that exhibit four distinct resistance states, which is a potential structure for multistate storage devices.

Original languageEnglish
Pages (from-to)2612-2615
Number of pages4
JournalIEEE Transactions on Magnetics
Volume44
Issue number11 PART 2
DOIs
Publication statusPublished - Nov 2008

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Keywords

  • Dual-spin valves (DSVs)
  • Giant magnetoresistance (GMR)
  • Multistate storage
  • Perpendicular magnetic anisotropy (PMA)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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