Ion beam modification of exchange coupling to fabricate patterned media

Mojtaba Ranjbar, S. N. Piramanayagam*, R. Sbiaa, K. O. Aung, Z. B. Guo, T. C. Chong

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

For bit-patterned media, media with low remanent magnetization (M r) and high M r regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated the use of ion beam modification of media surface to define the low and high M r states using a medium that is at a low M r state to start with. The low M r state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy trilayer structured film. Local ion beam modification at 30 keV energy using Ga ions was used to create high M r regions. AFM and MFM observations indicated that patterned regions of low and high M r can be observed with ion beam irradiation. This technique is a potential method to achieve patterned media without the need of planarization techniques.

Original languageEnglish
Pages (from-to)2611-2614
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number3
DOIs
Publication statusPublished - Mar 2011

Keywords

  • Antiferromagnetically coupled media
  • Focused ion beam
  • Magnetic materials
  • Nanofabrication
  • Patterning

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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