Influence of He-ion irradiation on the characteristics of Pd/n-Si 0.90Ge0.10/Si Schottky contacts

M. Mamor, A. Sellai, K. Bouziane, S. H. Al Harthi, M. Al Busaidi, F. S. Gard

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.

Original languageEnglish
Article number007
Pages (from-to)1351-1356
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume40
Issue number5
DOIs
Publication statusPublished - Mar 7 2007

Fingerprint

Ion bombardment
ion irradiation
electric contacts
Temperature
temperature
capacitance-voltage characteristics
defects
Defects
Electric potential
inhomogeneity
traps
Capacitance
temperature dependence
Ions
electric potential
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Influence of He-ion irradiation on the characteristics of Pd/n-Si 0.90Ge0.10/Si Schottky contacts. / Mamor, M.; Sellai, A.; Bouziane, K.; Al Harthi, S. H.; Al Busaidi, M.; Gard, F. S.

In: Journal of Physics D: Applied Physics, Vol. 40, No. 5, 007, 07.03.2007, p. 1351-1356.

Research output: Contribution to journalArticle

@article{0b36d0db3e4548f9a8cbdc3717ffc5aa,
title = "Influence of He-ion irradiation on the characteristics of Pd/n-Si 0.90Ge0.10/Si Schottky contacts",
abstract = "Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.",
author = "M. Mamor and A. Sellai and K. Bouziane and {Al Harthi}, {S. H.} and {Al Busaidi}, M. and Gard, {F. S.}",
year = "2007",
month = "3",
day = "7",
doi = "10.1088/0022-3727/40/5/007",
language = "English",
volume = "40",
pages = "1351--1356",
journal = "British Journal of Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "5",

}

TY - JOUR

T1 - Influence of He-ion irradiation on the characteristics of Pd/n-Si 0.90Ge0.10/Si Schottky contacts

AU - Mamor, M.

AU - Sellai, A.

AU - Bouziane, K.

AU - Al Harthi, S. H.

AU - Al Busaidi, M.

AU - Gard, F. S.

PY - 2007/3/7

Y1 - 2007/3/7

N2 - Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.

AB - Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.

UR - http://www.scopus.com/inward/record.url?scp=33947626597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947626597&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/40/5/007

DO - 10.1088/0022-3727/40/5/007

M3 - Article

VL - 40

SP - 1351

EP - 1356

JO - British Journal of Applied Physics

JF - British Journal of Applied Physics

SN - 0022-3727

IS - 5

M1 - 007

ER -