Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of He-ion irradiated Pd/n-Si09Ge0.10 Schottky contacts have been measured in the temperature range from 100 to 300 K. Schottky barrier properties such as the Schottky barrier height (Φbn) and ideality factor (n) have been studied as a function of temperature. The degree to which their characteristics deviated from the ideal case increased as the temperature decreased. A decrease in Φbn and an increase in n with decreasing temperature are observed. Additionally, linear dependence between the so-called temperature factor T0 and temperature as well as between Φbn and n are shown. This type of strong temperature dependence indicates the presence of a large degree of lateral inhomogeneities of the barrier height, resulting from the He-ion irradiation induced defects and traps which produce a variation in the number of free carriers. The presence of electrically active defects introduced by He-ion irradiation at and below the Si0.90Ge0.10 surface support this interpretation.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)