Enhancement of light absorption in thin film solar cells with metallic nano-strips

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Numerical analysis using both Finite Element and Rigorous Coupled Wave Methods are used to examine the impact of salient parameters on the absorption and enhanced field distribution in a thin film solar cell with metallic nano-strip structures. The absorption enhancement in these structures is due to light coupling into both plasmonic and guided wave modes. It is shown that the combination of these modes could overcome the drawbacks of angle, wavelength and polarization selectivity. The simulation results show also that the metallic strips are much more efficient when on the bottom rather than on the top of the active layer (Si), that the thickness of an the optimum passivation SiO 2 layer thickness varies with the wavelength of the incident light, suggesting that a SiO2 layer with non-uniform thickness might be better for optimum overall absorption and efficiency. From the calculated field distribution as a function of both the strips depth and width, it appears that the field strength in the active layer is much more affected by the changes in the width rather than in the depth.

Original languageEnglish
Title of host publication2013 7th IEEE GCC Conference and Exhibition, GCC 2013
Pages298-302
Number of pages5
DOIs
Publication statusPublished - 2013
Event2013 7th IEEE GCC Conference and Exhibition, GCC 2013 - Doha, Qatar
Duration: Nov 17 2013Nov 20 2013

Other

Other2013 7th IEEE GCC Conference and Exhibition, GCC 2013
CountryQatar
CityDoha
Period11/17/1311/20/13

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Keywords

  • Absorption enhancement
  • Guided wave modes
  • Surface plasmons
  • Thin film solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Sellai, A. (2013). Enhancement of light absorption in thin film solar cells with metallic nano-strips. In 2013 7th IEEE GCC Conference and Exhibition, GCC 2013 (pp. 298-302). [6705793] https://doi.org/10.1109/IEEEGCC.2013.6705793