Determination of optimal pulse width and frequency in charge pumping technique

H. Bourdoucen, S. Harous, F. Rahmoune

Research output: Contribution to journalArticle

Abstract

A charge pumping technique based on variable gate pulse parameters has been demonstrated for sub-micron MOSFETs. The experimental results obtained show the existence of a peak in the charge pumping current for different gate pulse widths and different frequencies. Its magnitude increases at higher frequencies and shorter pulse widths. The developed measurement approach is very suitable for characterizing small MOSFETs when optimal conditions for both gate pulse width and frequency are set for maximum charge pumping current.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalInternational Journal of Electronics
Volume89
Issue number1
DOIs
Publication statusPublished - Jan 2002

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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