Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

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Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original languageEnglish
Article number153110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number15
DOIs
Publication statusPublished - Oct 10 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., ... Gard, F. (2005). Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, 87(15), 1-3. [153110]. https://doi.org/10.1063/1.2099533