Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C.Q. Noakes; P. Bailey; S. Al-Harthi; F. Gard

doi:10.1063/1.2099533

Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn^*, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C.Q. Noakes, P. Bailey, S. Al-Harthi, F. Gard

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original language	English
Article number	153110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	15
DOIs	https://doi.org/10.1063/1.2099533
Publication status	Published - Oct 10 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{e5d6060de2b9460cbd9f6a449fd63eb8,

title = "Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering",

abstract = "The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.",

author = "Quinn, {P. D.} and Wilson, {N. R.} and Hatfield, {S. A.} and McConville, {C. F.} and Bell, {G. R.} and Noakes, {T. C.Q.} and P. Bailey and S. Al-Harthi and F. Gard",

note = "Funding Information: One of the authors (G.R.B.) is grateful to the Royal Society for financial support. The authors thank T. S. Jones for access to the MBE growth facility at Imperial College London. The EPSRC is gratefully acknowledged for access to the MEIS facility.",

year = "2005",

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day = "10",

doi = "10.1063/1.2099533",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

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T1 - Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

AU - Quinn, P. D.

AU - Wilson, N. R.

AU - Hatfield, S. A.

AU - McConville, C. F.

AU - Bell, G. R.

AU - Noakes, T. C.Q.

AU - Bailey, P.

AU - Al-Harthi, S.

AU - Gard, F.

N1 - Funding Information: One of the authors (G.R.B.) is grateful to the Royal Society for financial support. The authors thank T. S. Jones for access to the MBE growth facility at Imperial College London. The EPSRC is gratefully acknowledged for access to the MEIS facility.

PY - 2005/10/10

Y1 - 2005/10/10

N2 - The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

AB - The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

Abstract

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