@article{e5d6060de2b9460cbd9f6a449fd63eb8,
title = "Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering",
abstract = "The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.",
author = "Quinn, {P. D.} and Wilson, {N. R.} and Hatfield, {S. A.} and McConville, {C. F.} and Bell, {G. R.} and Noakes, {T. C.Q.} and P. Bailey and S. Al-Harthi and F. Gard",
note = "Funding Information: One of the authors (G.R.B.) is grateful to the Royal Society for financial support. The authors thank T. S. Jones for access to the MBE growth facility at Imperial College London. The EPSRC is gratefully acknowledged for access to the MEIS facility.",
year = "2005",
month = oct,
day = "10",
doi = "10.1063/1.2099533",
language = "English",
volume = "87",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",
}