Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C Q Noakes; P. Bailey; S. Al-Harthi; F. Gard

doi:10.1063/1.2099533

Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn^*, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original language	English
Article number	153110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	15
DOIs	https://doi.org/10.1063/1.2099533
Publication status	Published - Oct 10 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.",

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AU - Wilson, N. R.

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AU - McConville, C. F.

AU - Bell, G. R.

AU - Noakes, T. C Q

AU - Bailey, P.

AU - Al-Harthi, S.

AU - Gard, F.

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