Abstract
The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.
Original language | English |
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Article number | 153110 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 15 |
DOIs | |
Publication status | Published - Oct 10 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)