Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

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Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original languageEnglish
Article number153110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number15
DOIs
Publication statusPublished - Oct 10 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., Bailey, P., Al-Harthi, S., & Gard, F. (2005). Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, 87(15), 1-3. [153110]. https://doi.org/10.1063/1.2099533