Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn*, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

*Corresponding author for this work

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original languageEnglish
Article number153110
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number15
DOIs
Publication statusPublished - Oct 10 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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