Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C Q Noakes; P. Bailey; S. Al-Harthi; F. Gard

doi:10.1063/1.2099533

Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn^*, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original language	English
Article number	153110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	15
DOIs	https://doi.org/10.1063/1.2099533
Publication status	Published - Oct 10 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2099533

Fingerprint Dive into the research topics of 'Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering'. Together they form a unique fingerprint.

Cite this

@article{e5d6060de2b9460cbd9f6a449fd63eb8,

title = "Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering",

abstract = "The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.",

author = "Quinn, {P. D.} and Wilson, {N. R.} and Hatfield, {S. A.} and McConville, {C. F.} and Bell, {G. R.} and Noakes, {T. C Q} and P. Bailey and S. Al-Harthi and F. Gard",

year = "2005",

month = oct,

day = "10",

doi = "10.1063/1.2099533",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

AU - Quinn, P. D.

AU - Wilson, N. R.

AU - Hatfield, S. A.

AU - McConville, C. F.

AU - Bell, G. R.

AU - Noakes, T. C Q

AU - Bailey, P.

AU - Al-Harthi, S.

AU - Gard, F.

PY - 2005/10/10

Y1 - 2005/10/10

N2 - The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

AB - The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

UR - http://www.scopus.com/inward/record.url?scp=28344453675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344453675&partnerID=8YFLogxK

U2 - 10.1063/1.2099533

DO - 10.1063/1.2099533

M3 - Article

AN - SCOPUS:28344453675

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 153110

ER -