Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn; N. R. Wilson; S. A. Hatfield; C. F. McConville; G. R. Bell; T. C Q Noakes; P. Bailey; S. Al-Harthi; F. Gard

doi:10.1063/1.2099533

Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering

P. D. Quinn, N. R. Wilson, S. A. Hatfield, C. F. McConville, G. R. Bell, T. C Q Noakes, P. Bailey, S. Al-Harthi, F. Gard

Physics

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20 Citations (Scopus)

Abstract

The composition profile along the [001] growth direction of low-growth-rate InAs-GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.

Original language	English
Article number	153110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	15
DOIs	https://doi.org/10.1063/1.2099533
Publication status	Published - Oct 10 2005

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Quinn, P. D., Wilson, N. R., Hatfield, S. A., McConville, C. F., Bell, G. R., Noakes, T. C. Q., ... Gard, F. (2005). Composition profiles of InAs-GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, 87(15), 1-3. [153110]. https://doi.org/10.1063/1.2099533

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Access to Document

10.1063/1.2099533