Abstract
This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.
| Original language | English |
|---|---|
| Title of host publication | 2014 2nd International Conference on Electronic Design, ICED 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 137-142 |
| Number of pages | 6 |
| ISBN (Print) | 9781479961030 |
| DOIs | |
| Publication status | Published - Jan 20 2011 |
| Event | 2014 2nd International Conference on Electronic Design, ICED 2014 - Penang, Malaysia Duration: Aug 19 2014 → Aug 21 2014 |
Other
| Other | 2014 2nd International Conference on Electronic Design, ICED 2014 |
|---|---|
| Country/Territory | Malaysia |
| City | Penang |
| Period | 8/19/14 → 8/21/14 |
Keywords
- Class-F
- GSM Frequencies
- high Efficiency. GaAs
- Power amplifier
ASJC Scopus subject areas
- Electrical and Electronic Engineering