Class-F power amplifier with high power added efficiency for 900MHz

M. Al-Ajmi, A. Al-Blushi, R. Al-Mamari, Z. Nadir, M. Bait-Suwailam

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a design and implementation of a Power Amplifier for GSM Transmitters using a high efficiency class-F type. A typical class-F circuit has been designed, simulated and implemented using GaAs pHEMT transistor at a frequency of 900MHz. The proposed design achieves 95.5% of theoretical Power Added Efficiency and 28.9dBm output power. To validate the designed circuit, experimental work is also conducted. Good agreement is achieved.

Original languageEnglish
Title of host publication2014 2nd International Conference on Electronic Design, ICED 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages137-142
Number of pages6
ISBN (Print)9781479961030
DOIs
Publication statusPublished - Jan 20 2011
Event2014 2nd International Conference on Electronic Design, ICED 2014 - Penang, Malaysia
Duration: Aug 19 2014Aug 21 2014

Other

Other2014 2nd International Conference on Electronic Design, ICED 2014
CountryMalaysia
CityPenang
Period8/19/148/21/14

Keywords

  • Class-F
  • GSM Frequencies
  • high Efficiency. GaAs
  • Power amplifier

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Al-Ajmi, M., Al-Blushi, A., Al-Mamari, R., Nadir, Z., & Bait-Suwailam, M. (2011). Class-F power amplifier with high power added efficiency for 900MHz. In 2014 2nd International Conference on Electronic Design, ICED 2014 (pp. 137-142). [7015786] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICED.2014.7015786