Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier

Noor Ul Islam; Muhammad Usman; Sibghatullah Khan; Tariq Jamil; Saad Rasheed; Shazma Ali; Sana Saeed

doi:10.1016/j.ijleo.2021.168212

Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier

Noor Ul Islam, Muhammad Usman^*, Sibghatullah Khan, Tariq Jamil, Saad Rasheed, Shazma Ali, Sana Saeed

^*المؤلف المقابل لهذا العمل

Electrical and Computer Engineering

نتاج البحث: المساهمة في مجلة › Article › مراجعة النظراء

3 اقتباسات (Scopus)

ملخص

The optical properties of AlGaN-based deep ultraviolet light-emitting diodes (DUV LED) with step-graded AlInGaN last quantum barrier (LQB) are numerically studied. In contrast to conventional LQB, step-quaternary-graded last quantum barrier (QGLQB) exhibits enhancement in the internal quantum efficiency (IQE). This is attributed to the reduction in lattice mismatch, leading to suppressed leakage of electrons and enhanced hole transportation into the multiquantum well (MQW). Electrons are enhanced by ~124% whereas holes are enhanced by ~22% in the QGLQB structure. Moreover, the efficiency droop is also reduced from ~77% (conventional structure) to ~8% (proposed structure).

اللغة الأصلية	English
رقم المقال	168212
دورية	Optik
مستوى الصوت	248
المعرِّفات الرقمية للأشياء	https://doi.org/10.1016/j.ijleo.2021.168212
حالة النشر	Published - ديسمبر 2021

ASJC Scopus subject areas

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10.1016/j.ijleo.2021.168212

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@article{52747549f5e34f4c9813a04e39cfb513,

title = "Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier",

abstract = "The optical properties of AlGaN-based deep ultraviolet light-emitting diodes (DUV LED) with step-graded AlInGaN last quantum barrier (LQB) are numerically studied. In contrast to conventional LQB, step-quaternary-graded last quantum barrier (QGLQB) exhibits enhancement in the internal quantum efficiency (IQE). This is attributed to the reduction in lattice mismatch, leading to suppressed leakage of electrons and enhanced hole transportation into the multiquantum well (MQW). Electrons are enhanced by ~124% whereas holes are enhanced by ~22% in the QGLQB structure. Moreover, the efficiency droop is also reduced from ~77% (conventional structure) to ~8% (proposed structure).",

keywords = "AlInGaN, DUV LEDs, IQE, SiLENSe",

author = "Islam, {Noor Ul} and Muhammad Usman and Sibghatullah Khan and Tariq Jamil and Saad Rasheed and Shazma Ali and Sana Saeed",

note = "Funding Information: We are thankful to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed support in conducting the study. The authors would like to thank STR{\textregistered} for lending technical support for this work. The data that support the findings of this study are, available from the corresponding author upon reasonable request. Publisher Copyright: {\textcopyright} 2021 Elsevier GmbH",

year = "2021",

month = dec,

doi = "10.1016/j.ijleo.2021.168212",

language = "English",

volume = "248",

journal = "Optik",

issn = "0030-4026",

publisher = "Urban und Fischer Verlag Jena",

}

TY - JOUR

T1 - Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier

AU - Islam, Noor Ul

AU - Usman, Muhammad

AU - Khan, Sibghatullah

AU - Jamil, Tariq

AU - Rasheed, Saad

AU - Ali, Shazma

AU - Saeed, Sana

N1 - Funding Information: We are thankful to Ghulam Ishaq Khan Institute of Engineering Sciences and Technology (Pakistan) for providing the needed support in conducting the study. The authors would like to thank STR® for lending technical support for this work. The data that support the findings of this study are, available from the corresponding author upon reasonable request. Publisher Copyright: © 2021 Elsevier GmbH

PY - 2021/12

Y1 - 2021/12

N2 - The optical properties of AlGaN-based deep ultraviolet light-emitting diodes (DUV LED) with step-graded AlInGaN last quantum barrier (LQB) are numerically studied. In contrast to conventional LQB, step-quaternary-graded last quantum barrier (QGLQB) exhibits enhancement in the internal quantum efficiency (IQE). This is attributed to the reduction in lattice mismatch, leading to suppressed leakage of electrons and enhanced hole transportation into the multiquantum well (MQW). Electrons are enhanced by ~124% whereas holes are enhanced by ~22% in the QGLQB structure. Moreover, the efficiency droop is also reduced from ~77% (conventional structure) to ~8% (proposed structure).

AB - The optical properties of AlGaN-based deep ultraviolet light-emitting diodes (DUV LED) with step-graded AlInGaN last quantum barrier (LQB) are numerically studied. In contrast to conventional LQB, step-quaternary-graded last quantum barrier (QGLQB) exhibits enhancement in the internal quantum efficiency (IQE). This is attributed to the reduction in lattice mismatch, leading to suppressed leakage of electrons and enhanced hole transportation into the multiquantum well (MQW). Electrons are enhanced by ~124% whereas holes are enhanced by ~22% in the QGLQB structure. Moreover, the efficiency droop is also reduced from ~77% (conventional structure) to ~8% (proposed structure).

KW - AlInGaN

KW - DUV LEDs

KW - IQE

KW - SiLENSe

UR - http://www.scopus.com/inward/record.url?scp=85117929437&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85117929437&partnerID=8YFLogxK

U2 - 10.1016/j.ijleo.2021.168212

DO - 10.1016/j.ijleo.2021.168212

M3 - Article

AN - SCOPUS:85117929437

SN - 0030-4026

VL - 248

JO - Optik

JF - Optik

M1 - 168212

ER -

Remarkable efficiency improvement in AlGaN-based ultraviolet light-emitting diodes using graded last quantum barrier

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