Votage step response of Al(Ga)As GaAs resonant tunnel diodes

A. Sellai, A. Zarea, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

Research output: Contribution to journalArticle

2 Citations (Scopus)


The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

Original languageEnglish
Pages (from-to)63-66
Number of pages4
JournalSuperlattices and Microstructures
Issue number1
Publication statusPublished - 1991


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Sellai, A., Zarea, A., Raven, M. S., Steenson, D. P., Chamberlain, J. M., Henini, M., & Hughes, O. H. (1991). Votage step response of Al(Ga)As GaAs resonant tunnel diodes. Superlattices and Microstructures, 10(1), 63-66. https://doi.org/10.1016/0749-6036(91)90149-L