Votage step response of Al(Ga)As GaAs resonant tunnel diodes

A. Sellai; A. Zarea; M. S. Raven; D. P. Steenson; J. M. Chamberlain; M. Henini; O. H. Hughes

doi:10.1016/0749-6036(91)90149-L

Votage step response of Al(Ga)As GaAs resonant tunnel diodes

A. Sellai^*, A. Zarea, M. S. Raven, D. P. Steenson, J. M. Chamberlain, M. Henini, O. H. Hughes

^*Corresponding author for this work

Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

Original language	English
Pages (from-to)	63-66
Number of pages	4
Journal	Superlattices and Microstructures
Volume	10
Issue number	1
DOIs	https://doi.org/10.1016/0749-6036(91)90149-L
Publication status	Published - 1991

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Votage step response of Al(Ga)As GaAs resonant tunnel diodes",

abstract = "The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.",

author = "A. Sellai and A. Zarea and Raven, {M. S.} and Steenson, {D. P.} and Chamberlain, {J. M.} and M. Henini and Hughes, {O. H.}",

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doi = "10.1016/0749-6036(91)90149-L",

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T1 - Votage step response of Al(Ga)As GaAs resonant tunnel diodes

AU - Sellai, A.

AU - Zarea, A.

AU - Raven, M. S.

AU - Steenson, D. P.

AU - Chamberlain, J. M.

AU - Henini, M.

AU - Hughes, O. H.

PY - 1991

Y1 - 1991

N2 - The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

AB - The step response of Al(Ga)As GaAs double barrier resonant tunnel (DBRT) diodes was determined using a semi-empirical approach which uses high frequency small signal conductance measured data rather than static current voltage characteristics. The differential equation arising from the equivalent circuit of the DBRT diode is solved for each value of the measured conductance. This is repeated throughout the negative differential conductance region finally yielding the large signal step response. The results obtained are compared with direct time domain reflectometry measurements using a network analyser.

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VL - 10

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Votage step response of Al(Ga)As GaAs resonant tunnel diodes

Abstract

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