The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

Tariq Jamil, Muhammad Usman*, Shahzeb Malik, Habibullah Jamal

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) with quaternary last quantum barrier (QLQB) and step-graded electron blocking layer (EBL) are investigated numerically. The results show that the internal quantum efficiency (IQE) and radiative recombination rate are remarkably improved with AlInGaN step-graded EBL and QLQB as compared to conventional or ternary AlGaN EBL and last quantum barrier (LQB). This significant improvement is assigned to the optimal recombination of electron–hole pairs in the multiple quantum wells (MQWs). It is due to the decrease in strain and lattice mismatch between the epi-layers which alleviates the effective potential barrier height of the conduction band and suppressed the electron leakage without affecting the holes transportation to the active region. Moreover, to figure out quantitatively, the electron and hole quantity increased by ~ 25% and ~ 15%, respectively. Additionally, the IQE and radiative recombination rate are enhanced by 48% and 55%, respectively, as compared to conventional LED. So, we believe that our proposed structure is not only a feasible approach for achieving highly efficient DUV LEDs, but the device physics presented in this study establishes a fruitful understanding of III nitride-based optoelectronic devices.

Original languageEnglish
Article number397
JournalApplied Physics A: Materials Science and Processing
Volume127
Issue number5
DOIs
Publication statusPublished - May 2021
Externally publishedYes

Keywords

  • AlInGaN
  • DUV LEDs
  • Efficiency
  • Optoelectronic performance

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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