The design of resonant-cavity-enhanced photodetectors for a high bandwidth-efficiency product

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Abstract

A high-bandwidth-efficiency (BWE) product is a basic photodetector requirement for use in ultrawide-band optical interconnecting and communication systems. An InP-InGaAs resonant-cavity enhanced (RCE) vertically illuminated p-i-n photodiode with a silicon dioxide antireflection-coating layer is simulated. The analysis reveals that not only does the antireflection-coating layer have an effect on the quantum efficiency but it also has an indirect effect on the bandwidth. For a simulated device with an antireflection-coating layer varying from 0 to 0.094 μm, the BWE product varies from 25 to 275 GHz. These values of the BWE product correspond to an active layer thickness of between 0.095 and 1.16 μm. Based on this, a simple design approach is suggested so as to achieve high-BWE products for RCE transit-time limited photodetectors.

Original languageEnglish
Pages (from-to)581-583
Number of pages3
JournalSemiconductor Science and Technology
Volume16
Issue number7
DOIs
Publication statusPublished - Jul 2001

Fingerprint

Cavity resonators
cavity resonators
Photodetectors
photometers
Antireflection coatings
antireflection coatings
bandwidth
Bandwidth
products
transit time
Photodiodes
Quantum efficiency
Optical systems
Silicon Dioxide
photodiodes
telecommunication
quantum efficiency
Communication systems
Silica
silicon dioxide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

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abstract = "A high-bandwidth-efficiency (BWE) product is a basic photodetector requirement for use in ultrawide-band optical interconnecting and communication systems. An InP-InGaAs resonant-cavity enhanced (RCE) vertically illuminated p-i-n photodiode with a silicon dioxide antireflection-coating layer is simulated. The analysis reveals that not only does the antireflection-coating layer have an effect on the quantum efficiency but it also has an indirect effect on the bandwidth. For a simulated device with an antireflection-coating layer varying from 0 to 0.094 μm, the BWE product varies from 25 to 275 GHz. These values of the BWE product correspond to an active layer thickness of between 0.095 and 1.16 μm. Based on this, a simple design approach is suggested so as to achieve high-BWE products for RCE transit-time limited photodetectors.",
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