Temperature dependence of the quantum Hall effect in graphene

A. J.M. Giesbers; U. Zeitler; M. I. Katsnelson; L. A. Ponomarenko; T. M.G. Mohiuddin; J. C. Maan

doi:10.1016/j.physe.2007.08.111

Temperature dependence of the quantum Hall effect in graphene

A. J.M. Giesbers^*, U. Zeitler, M. I. Katsnelson, L. A. Ponomarenko, T. M.G. Mohiuddin, J. C. Maan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν = 6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν = ± 2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and T > 100 K it approaches the theoretical gap for very sharp Landau levels.

Original language	English
Pages (from-to)	1089-1091
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	40
Issue number	5
DOIs	https://doi.org/10.1016/j.physe.2007.08.111
Publication status	Published - Mar 2008
Externally published	Yes

Keywords

Activation gaps
Graphene
Quantum Hall effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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10.1016/j.physe.2007.08.111

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title = "Temperature dependence of the quantum Hall effect in graphene",

abstract = "We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν = 6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν = ± 2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and T > 100 K it approaches the theoretical gap for very sharp Landau levels.",

keywords = "Activation gaps, Graphene, Quantum Hall effect",

author = "Giesbers, {A. J.M.} and U. Zeitler and Katsnelson, {M. I.} and Ponomarenko, {L. A.} and Mohiuddin, {T. M.G.} and Maan, {J. C.}",

year = "2008",

month = mar,

doi = "10.1016/j.physe.2007.08.111",

language = "English",

volume = "40",

pages = "1089--1091",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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TY - JOUR

T1 - Temperature dependence of the quantum Hall effect in graphene

AU - Giesbers, A. J.M.

AU - Zeitler, U.

AU - Katsnelson, M. I.

AU - Ponomarenko, L. A.

AU - Mohiuddin, T. M.G.

AU - Maan, J. C.

PY - 2008/3

Y1 - 2008/3

N2 - We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν = 6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν = ± 2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and T > 100 K it approaches the theoretical gap for very sharp Landau levels.

AB - We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν = 6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν = ± 2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and T > 100 K it approaches the theoretical gap for very sharp Landau levels.

KW - Activation gaps

KW - Graphene

KW - Quantum Hall effect

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U2 - 10.1016/j.physe.2007.08.111

DO - 10.1016/j.physe.2007.08.111

M3 - Article

AN - SCOPUS:39649086900

SN - 1386-9477

VL - 40

SP - 1089

EP - 1091

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 5

ER -

Temperature dependence of the quantum Hall effect in graphene

Abstract

Keywords

ASJC Scopus subject areas

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