Temperature dependence of the quantum Hall effect in graphene

A. J M Giesbers*, U. Zeitler, M. I. Katsnelson, L. A. Ponomarenko, T. M G Mohiuddin, J. C. Maan

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

We have measured the temperature dependence of the quantum Hall effect in single layer graphene for temperatures ranging from 4 to 300 K in magnetic fields up to 32 T. The gap between higher Landau levels measured at ν = 6 follows the classically expected behavior for broadened Landau levels. In contrast, the ν = ± 2 gap, corresponding to excitations between the zeroth and first Landau level of electrons and holes, behaves totally different and is strongly temperature and field dependent. At high magnetic fields and T > 100 K it approaches the theoretical gap for very sharp Landau levels.

Original languageEnglish
Pages (from-to)1089-1091
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume40
Issue number5
DOIs
Publication statusPublished - Mar 2008

Keywords

  • Activation gaps
  • Graphene
  • Quantum Hall effect

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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