Temperature dependence of dark current in a Si-pin photodiode

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

We have studied the temperature dependence of the forward dark current in a Si PIN photodiode. The temperature variations of the ideality factor and saturation current suggest that, depending on temperature and bias, both tunneling enhanced interface recombination and bulk recombination contribute to the conduction process. Furthermore, the capacitance measurements reveal that the doping density distribution is closer to the case of a linearly graded junction with an impurity gradient that is practically temperature independent.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Pages267-270
Number of pages4
DOIs
Publication statusPublished - 2008
Event2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008 - Johor Bahru, Johor, Malaysia
Duration: Nov 25 2008Nov 27 2008

Other

Other2008 IEEE International Conference on Semiconductor Electronics, ICSE 2008
CountryMalaysia
CityJohor Bahru, Johor
Period11/25/0811/27/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Sellai, A. (2008). Temperature dependence of dark current in a Si-pin photodiode. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 267-270). [4770321] https://doi.org/10.1109/SMELEC.2008.4770321