Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs

A. Sellai, A. Mesli, P. Kruszewski, A. R. Peaker, M. Missous

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8094
DOIs
Publication statusPublished - 2011
EventNanophotonic Materials VIII - San Diego, CA, United States
Duration: Aug 24 2011Aug 25 2011

Other

OtherNanophotonic Materials VIII
CountryUnited States
CitySan Diego, CA
Period8/24/118/25/11

Keywords

  • Admittance spectroscopy
  • Capacitance-voltage characteristics
  • Electron capture rates
  • Frequency and temperature dependence
  • Self-assembled quantum dots

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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  • Cite this

    Sellai, A., Mesli, A., Kruszewski, P., Peaker, A. R., & Missous, M. (2011). Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8094). [80940S] https://doi.org/10.1117/12.897856