TY - GEN
T1 - Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs
AU - Sellai, A.
AU - Mesli, A.
AU - Kruszewski, P.
AU - Peaker, A. R.
AU - Missous, M.
PY - 2011
Y1 - 2011
N2 - We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.
AB - We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.
KW - Admittance spectroscopy
KW - Capacitance-voltage characteristics
KW - Electron capture rates
KW - Frequency and temperature dependence
KW - Self-assembled quantum dots
UR - http://www.scopus.com/inward/record.url?scp=80053463436&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053463436&partnerID=8YFLogxK
U2 - 10.1117/12.897856
DO - 10.1117/12.897856
M3 - Conference contribution
AN - SCOPUS:80053463436
SN - 9780819487049
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Nanophotonic Materials VIII
T2 - Nanophotonic Materials VIII
Y2 - 24 August 2011 through 25 August 2011
ER -