Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs

A. Sellai, A. Mesli, P. Kruszewski, A. R. Peaker, M. Missous

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied using frequency and temperature dependent admittance some electronic properties of InAs QDs embedded in a GaAs structure. The presence of QDs in our structure is evidenced in the C-V characteristics at all temperatures and frequencies by a plateau-like structure that is related to charging and discharging of QDs. Concurrently, the conductance shows a manifest peak in a certain bias range for temperatures below 150K. The conductance dependence on both temperature and applied bias reveal two different mechanisms of carrier escape from the QDs. Moreover, the conductance data at a given frequency was used to estimate rates and activation energies in association with the electron escape mechanisms from the QDs.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8094
DOIs
Publication statusPublished - 2011
EventNanophotonic Materials VIII - San Diego, CA, United States
Duration: Aug 24 2011Aug 25 2011

Other

OtherNanophotonic Materials VIII
CountryUnited States
CitySan Diego, CA
Period8/24/118/25/11

Fingerprint

Gallium Arsenide
Quantum Dots
electrical impedance
Semiconductor quantum dots
Conductance
quantum dots
Dependent
escape
Temperature
temperature
Electronic Properties
Activation Energy
Electronic properties
charging
plateaus
Activation energy
Association reactions
Electron
activation energy
indium arsenide

Keywords

  • Admittance spectroscopy
  • Capacitance-voltage characteristics
  • Electron capture rates
  • Frequency and temperature dependence
  • Self-assembled quantum dots

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Sellai, A., Mesli, A., Kruszewski, P., Peaker, A. R., & Missous, M. (2011). Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8094). [80940S] https://doi.org/10.1117/12.897856

Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. / Sellai, A.; Mesli, A.; Kruszewski, P.; Peaker, A. R.; Missous, M.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8094 2011. 80940S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Sellai, A, Mesli, A, Kruszewski, P, Peaker, AR & Missous, M 2011, Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8094, 80940S, Nanophotonic Materials VIII, San Diego, CA, United States, 8/24/11. https://doi.org/10.1117/12.897856
Sellai A, Mesli A, Kruszewski P, Peaker AR, Missous M. Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8094. 2011. 80940S https://doi.org/10.1117/12.897856
Sellai, A. ; Mesli, A. ; Kruszewski, P. ; Peaker, A. R. ; Missous, M. / Temperature and frequency dependent admittance of InAs self-assembled quantum dots embedded in GaAs. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8094 2011.
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