Surface mode enhanced photocurrent from PtSi/n-Si Schottky barrier detectors

A. Sellai, P. G. McCafferty, P. Dawson, S. H. Raza, H. S. Gamble

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Abstract

Using the Otto geometry of attenuated total reflection (prism-air gap-sample), front illuminated PtSi/Si Schottky barrier detectors are shown to exhibit enhanced photocurrent at surface plasmon resonance in the near infrared region. Correlation of the measured photocurrent with the calculated transmittance of light into the Si substate is demonstrated. The transmittance, which is due to surface plasmon re-radiation, is the optical parameter of principal importance in photosignal generation since the photon energies used here are greater than the silicon intrinsic bandgap. The results presented here indicate clearly the important features in optimizing surface plasmon enhancement in photodetection both above and below the silicon absorption edge.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalInternational Journal of Optoelectronics
Volume9
Issue number1
Publication statusPublished - Jan 1994

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Sellai, A., McCafferty, P. G., Dawson, P., Raza, S. H., & Gamble, H. S. (1994). Surface mode enhanced photocurrent from PtSi/n-Si Schottky barrier detectors. International Journal of Optoelectronics, 9(1), 65-70.