Study of magnetoresistance of epitaxial magnetite films grown on vicinal MgO (100) substrate

R. G S Sofin, S. K. Arora, I. V. Shvets

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The magnetoresistance (MR) studies of magnetite thin films deposited on vicinal MgO substrates show an enhanced MR along the miscut direction as compared to the direction perpendicular to it. The MR anisotropy increases with the decrease in temperature and peaks at the Verwey transition. The increase in magnetoresistance and anisotropy behavior is attributed to the formation of a greater number of out-of-plane shifted antiphase boundaries due to the step edges on vicinal MgO substrates. These local electronic and spin structure modifications at the APBs introduce additional spin scattering and are responsible for the increase in MR along the miscut.

Original languageEnglish
Article number10D315
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - May 15 2005

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antiphase boundaries
magnetite
anisotropy
electronic structure
thin films
scattering
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Study of magnetoresistance of epitaxial magnetite films grown on vicinal MgO (100) substrate. / Sofin, R. G S; Arora, S. K.; Shvets, I. V.

In: Journal of Applied Physics, Vol. 97, No. 10, 10D315, 15.05.2005.

Research output: Contribution to journalArticle

@article{a7866543d67a4f2f946787bc379e09cf,
title = "Study of magnetoresistance of epitaxial magnetite films grown on vicinal MgO (100) substrate",
abstract = "The magnetoresistance (MR) studies of magnetite thin films deposited on vicinal MgO substrates show an enhanced MR along the miscut direction as compared to the direction perpendicular to it. The MR anisotropy increases with the decrease in temperature and peaks at the Verwey transition. The increase in magnetoresistance and anisotropy behavior is attributed to the formation of a greater number of out-of-plane shifted antiphase boundaries due to the step edges on vicinal MgO substrates. These local electronic and spin structure modifications at the APBs introduce additional spin scattering and are responsible for the increase in MR along the miscut.",
author = "Sofin, {R. G S} and Arora, {S. K.} and Shvets, {I. V.}",
year = "2005",
month = "5",
day = "15",
doi = "10.1063/1.1850361",
language = "English",
volume = "97",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "10",

}

TY - JOUR

T1 - Study of magnetoresistance of epitaxial magnetite films grown on vicinal MgO (100) substrate

AU - Sofin, R. G S

AU - Arora, S. K.

AU - Shvets, I. V.

PY - 2005/5/15

Y1 - 2005/5/15

N2 - The magnetoresistance (MR) studies of magnetite thin films deposited on vicinal MgO substrates show an enhanced MR along the miscut direction as compared to the direction perpendicular to it. The MR anisotropy increases with the decrease in temperature and peaks at the Verwey transition. The increase in magnetoresistance and anisotropy behavior is attributed to the formation of a greater number of out-of-plane shifted antiphase boundaries due to the step edges on vicinal MgO substrates. These local electronic and spin structure modifications at the APBs introduce additional spin scattering and are responsible for the increase in MR along the miscut.

AB - The magnetoresistance (MR) studies of magnetite thin films deposited on vicinal MgO substrates show an enhanced MR along the miscut direction as compared to the direction perpendicular to it. The MR anisotropy increases with the decrease in temperature and peaks at the Verwey transition. The increase in magnetoresistance and anisotropy behavior is attributed to the formation of a greater number of out-of-plane shifted antiphase boundaries due to the step edges on vicinal MgO substrates. These local electronic and spin structure modifications at the APBs introduce additional spin scattering and are responsible for the increase in MR along the miscut.

UR - http://www.scopus.com/inward/record.url?scp=21044452915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21044452915&partnerID=8YFLogxK

U2 - 10.1063/1.1850361

DO - 10.1063/1.1850361

M3 - Article

VL - 97

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 10D315

ER -