Study of InP surface treatments by scanning photoluminescence microscopy

S. K. Krawczyk*, M. Garrigues, H. Bouredoucen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

Spatially resolved photoluminescence (PL) measurements are used to study the effect of etching (HF, HNO3, NH4OH, H 2O2) and annealing of InP surface. We reveal a strong nonuniformity of the PL intensity on a microscopic scale and a large dependence of the morphology of the PL images on chemical treatment and annealing of InP samples.

Original languageEnglish
Pages (from-to)392-395
Number of pages4
JournalJournal of Applied Physics
Volume60
Issue number1
DOIs
Publication statusPublished - 1986
Externally publishedYes

ASJC Scopus subject areas

  • General Physics and Astronomy

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