Study of InP surface treatments by scanning photoluminescence microscopy

S. K. Krawczyk, M. Garrigues, H. Bouredoucen

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Spatially resolved photoluminescence (PL) measurements are used to study the effect of etching (HF, HNO3, NH4OH, H 2O2) and annealing of InP surface. We reveal a strong nonuniformity of the PL intensity on a microscopic scale and a large dependence of the morphology of the PL images on chemical treatment and annealing of InP samples.

Original languageEnglish
Pages (from-to)392-395
Number of pages4
JournalJournal of Applied Physics
Volume60
Issue number1
DOIs
Publication statusPublished - 1986

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surface treatment
microscopy
photoluminescence
scanning
annealing
nonuniformity
etching

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Study of InP surface treatments by scanning photoluminescence microscopy. / Krawczyk, S. K.; Garrigues, M.; Bouredoucen, H.

In: Journal of Applied Physics, Vol. 60, No. 1, 1986, p. 392-395.

Research output: Contribution to journalArticle

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