Structural and optical properties of silica single-layer films doped with ZnS quantum dots: Photoluminescence monitoring of annealing-induced defects

Boukhalfa Belache, Youcef Khelfaoui, Mohamed Bououdina, Tewfik Souier, Weiping Cai

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Zinc Sulfide (ZnS) quantum dots (QDs) embedded in sol-gel silica single-layer films were synthesized by dip-coating and thermal treatment. Nucleation and growth of these QDs occurred during annealing. The effect of annealing temperature on morphological, structural and optical properties of the films was considered in the range (200–500 °C). Scanning electron microscopy (SEM), atomic force microscopy (AFM), grazing incident angle X-ray diffraction (GIXD), UV–Visible spectroscopy (UV–Vis) and photoluminescence (PL) were used to characterize the films. The band gap values of the ZnS QDs ranged from 3.83 to 4.03 eV corresponding to average radii in the range 1.5–2.1 nm. PL revealed different annealing-induced defects in the ZnS QDs. Zn interstices dominate at 400 and 500 °C annealing temperatures by the appearance of two excitation bands at 395 nm and 404 nm respectively. Corresponding emission bands were recorded at 402 nm and 408 nm. An emission peak (457 nm) and an excitation peak (437 nm) were also observed at 500 °C. These peaks were attributed to S vacancies which might be created by the transformation of ZnS to ZnO. Finally, an overall energy-level diagram showing all the defect states in the gap of ZnS was proposed.

Original languageEnglish
Pages (from-to)42-49
Number of pages8
JournalMaterials Science in Semiconductor Processing
Volume76
DOIs
Publication statusPublished - Mar 15 2018

Fingerprint

Zinc sulfide
zinc sulfides
Silicon Dioxide
Semiconductor quantum dots
Structural properties
Photoluminescence
Optical properties
Silica
quantum dots
Annealing
silicon dioxide
photoluminescence
optical properties
Defects
annealing
Monitoring
defects
interstices
Silica Gel
grazing

Keywords

  • Annealing
  • Intrinsic defects
  • Optical properties
  • Photoluminescence
  • Structural properties
  • ZnS quantum dots

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Structural and optical properties of silica single-layer films doped with ZnS quantum dots : Photoluminescence monitoring of annealing-induced defects. / Belache, Boukhalfa; Khelfaoui, Youcef; Bououdina, Mohamed; Souier, Tewfik; Cai, Weiping.

In: Materials Science in Semiconductor Processing, Vol. 76, 15.03.2018, p. 42-49.

Research output: Contribution to journalArticle

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