Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy

R. Sbiaa, R. Law, S. Y H Lua, E. L. Tan, T. Tahmasebi, C. C. Wang, S. N. Piramanayagam

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39 Citations (Scopus)

Abstract

A novel multi-bit dual pseudo spin valve with perpendicular magnetic anisotropy is investigated for spin transfer torque (STT) switching. The structure consists of two free layers and one reference layer, and all are based on Co/Pd multilayer. STT switching of the multi-bit device shows distinct four resistance levels. The selection of intrinsic properties of each ferromagnetic layer can be controlled for distinct separation of the resistance levels as well as the respective STT switching current. Reversible transitions between different states can be achieved by a pulsed current, in which its critical value is found to be linearly dependent on pulse duration.

Original languageEnglish
Article number092506
JournalApplied Physics Letters
Volume99
Issue number9
DOIs
Publication statusPublished - Aug 29 2011

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Sbiaa, R., Law, R., Lua, S. Y. H., Tan, E. L., Tahmasebi, T., Wang, C. C., & Piramanayagam, S. N. (2011). Spin transfer torque switching for multi-bit per cell magnetic memory with perpendicular anisotropy. Applied Physics Letters, 99(9), [092506]. https://doi.org/10.1063/1.3632075