Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer

Randall Law, Ei Leen Tan, Rachid Sbiaa, Thomas Liew, Tow Chong Chong

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34 Citations (Scopus)

Abstract

We describe a strategy to reduce spin transfer switching (STS) currents in CoFe/Pd-based perpendicular anisotropy single spin valves (SSVs) by the insertion of an in-plane spin polarizer, thus creating a modified-dual spin valve (m -DSV). For SSV devices, concurrent STS of both magnetic layers was observed for positive currents, making the parallel-to-antiparallel (P→AP) transition impossible. In m -DSV devices, we observed a 60% reduction in the energy barrier for AP→P transitions and a 40% reduction in J c AP→P with 10 ns STS current pulses compared to SSV devices. Furthermore, the m -DSV structure enabled the soft layer to switch independently from the hard layer via STS.

Original languageEnglish
Article number062516
JournalApplied Physics Letters
Volume94
Issue number6
DOIs
Publication statusPublished - 2009

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polarizers
critical current
anisotropy
insertion
switches

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer. / Law, Randall; Tan, Ei Leen; Sbiaa, Rachid; Liew, Thomas; Chong, Tow Chong.

In: Applied Physics Letters, Vol. 94, No. 6, 062516, 2009.

Research output: Contribution to journalArticle

@article{b37cf66b680949e8b168cff8187de238,
title = "Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer",
abstract = "We describe a strategy to reduce spin transfer switching (STS) currents in CoFe/Pd-based perpendicular anisotropy single spin valves (SSVs) by the insertion of an in-plane spin polarizer, thus creating a modified-dual spin valve (m -DSV). For SSV devices, concurrent STS of both magnetic layers was observed for positive currents, making the parallel-to-antiparallel (P→AP) transition impossible. In m -DSV devices, we observed a 60{\%} reduction in the energy barrier for AP→P transitions and a 40{\%} reduction in J c AP→P with 10 ns STS current pulses compared to SSV devices. Furthermore, the m -DSV structure enabled the soft layer to switch independently from the hard layer via STS.",
author = "Randall Law and Tan, {Ei Leen} and Rachid Sbiaa and Thomas Liew and Chong, {Tow Chong}",
year = "2009",
doi = "10.1063/1.3083546",
language = "English",
volume = "94",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "6",

}

TY - JOUR

T1 - Reduction in critical current for spin transfer switching in perpendicular anisotropy spin valves using an in-plane spin polarizer

AU - Law, Randall

AU - Tan, Ei Leen

AU - Sbiaa, Rachid

AU - Liew, Thomas

AU - Chong, Tow Chong

PY - 2009

Y1 - 2009

N2 - We describe a strategy to reduce spin transfer switching (STS) currents in CoFe/Pd-based perpendicular anisotropy single spin valves (SSVs) by the insertion of an in-plane spin polarizer, thus creating a modified-dual spin valve (m -DSV). For SSV devices, concurrent STS of both magnetic layers was observed for positive currents, making the parallel-to-antiparallel (P→AP) transition impossible. In m -DSV devices, we observed a 60% reduction in the energy barrier for AP→P transitions and a 40% reduction in J c AP→P with 10 ns STS current pulses compared to SSV devices. Furthermore, the m -DSV structure enabled the soft layer to switch independently from the hard layer via STS.

AB - We describe a strategy to reduce spin transfer switching (STS) currents in CoFe/Pd-based perpendicular anisotropy single spin valves (SSVs) by the insertion of an in-plane spin polarizer, thus creating a modified-dual spin valve (m -DSV). For SSV devices, concurrent STS of both magnetic layers was observed for positive currents, making the parallel-to-antiparallel (P→AP) transition impossible. In m -DSV devices, we observed a 60% reduction in the energy barrier for AP→P transitions and a 40% reduction in J c AP→P with 10 ns STS current pulses compared to SSV devices. Furthermore, the m -DSV structure enabled the soft layer to switch independently from the hard layer via STS.

UR - http://www.scopus.com/inward/record.url?scp=60349120991&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=60349120991&partnerID=8YFLogxK

U2 - 10.1063/1.3083546

DO - 10.1063/1.3083546

M3 - Article

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 6

M1 - 062516

ER -