Recent Developments in Spin Transfer Torque MRAM

Rachid Sbiaa*, S. N. Piramanayagam

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

23 Citations (Scopus)

Abstract

Spin transfer torque (STT) switching-based magnetic random access memory (MRAM) is gaining significant industrial and academic attention due to its potential application as a non-volatile memory device in computing devices, smartphones, and so on. STT-MRAM devices with in-plane magnetization configuration have been marketed as niche products. Devices with out-of-plane magnetization are being considered for embedded memory as the first step. Aggressive goals include replacing dynamic random access memory (DRAM) with STT-MRAM. This review article introduces the basics of STT-MRAM and describes the recent progress in overcoming certain challenges such as reduction of power consumption and increase of storage density, which will make it a strong competitor for DRAM.

Original languageEnglish
Article number1700163
JournalPhysica Status Solidi - Rapid Research Letters
Volume11
Issue number12
DOIs
Publication statusPublished - Dec 1 2017

Keywords

  • magnetic random access memory
  • multi-bit per cell
  • perpendicular magnetic anisotropy
  • spin transfer torque

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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