Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations

A. Sellai, P. Dawson

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The overall quantum efficiency in surface plasmon (SP) enhanced Schottky barrier photodetectors is examined by considering both the external and internal yield. The external yield is considered through calculations of absorption and transmission of light in a configuration that allows reflectance minimization due to SP excitation. Following a Monte Carlo method, a procedure is presented to estimate the internal yield while taking into account the effect of elastic and inelastic scattering processes on excited carriers subsequent to photon absorption. The relative importance of internal photoemission and band-to-band contributions to the internal yield is highlighted along with the variation of the yield as a function of wavelength, metal thickness and other salient parameters of the detector.

Original languageEnglish
Pages (from-to)29-33
Number of pages5
JournalSolid State Electronics
Volume46
Issue number1
DOIs
Publication statusPublished - Jan 2002

Fingerprint

Photodetectors
Quantum efficiency
photometers
quantum efficiency
Inelastic scattering
Elastic scattering
augmentation
Wave transmission
Photoemission
excitation
Monte Carlo methods
Photons
Metals
Detectors
Wavelength
Monte Carlo method
elastic scattering
inelastic scattering
photoelectric emission
gallium arsenide

Keywords

  • Band-to-band efficiency
  • Internal photoemission
  • Quantum efficiency
  • Schottky photodetectors
  • Surface plasmons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Quantum efficiency in GaAs Schottky photodetectors with enhancement due to surface plasmon excitations. / Sellai, A.; Dawson, P.

In: Solid State Electronics, Vol. 46, No. 1, 01.2002, p. 29-33.

Research output: Contribution to journalArticle

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