Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation

Abdelhakim Mahdjoub, Hadj Bourdoucen, Abdelkader Djelloul

Research output: Contribution to journalArticle

Abstract

Metal-insulator-semiconductor (MIS) structures were produced by electron beam evaporation of Al2O3 on InP. Polyphosphate thin films of thickness 100-150 Å were used to passivate the interface InP\Insulator. Photoluminescence spectra are reported at low temperature at various stages of the realization process of the MIS-InP structure. Photoluminescence topography at ambient temperature made it possible to characterize the surface state after each technological stage. The interface degradation under the effect of repeated annealing is insignificant up to temperatures of 350°C. Radiative major defects detected by photoluminescence spectrum with energy 0.95-1.15 eV attributed to the complexes impurities of phosphorus vacancies are substantially reduced by the presence of anodic oxide.

Original languageEnglish
Pages (from-to)341-347
Number of pages7
JournalTurkish Journal of Physics
Volume29
Issue number6
Publication statusPublished - Nov 2005

Fingerprint

MIS (semiconductors)
photoluminescence
oxidation
ambient temperature
phosphorus
topography
insulators
evaporation
electron beams
degradation
impurities
annealing
oxides
defects
thin films
temperature
energy

Keywords

  • Indium phosphide
  • MIS structures
  • Photoluminescence

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Photoluminescence characterization of Al/Al2O3/InP MIS structures passivated by anodic oxidation. / Mahdjoub, Abdelhakim; Bourdoucen, Hadj; Djelloul, Abdelkader.

In: Turkish Journal of Physics, Vol. 29, No. 6, 11.2005, p. 341-347.

Research output: Contribution to journalArticle

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